Direct determination of structural heterogeneity in metallic glasses using four-dimensional scanning transmission electron microscopy.

We report the first direct quantification of the structural heterogeneity in metallic glasses using intensity variance and angular correlation analyses of the 4-dimensional (4-D) scanning transmission electron microscopy (STEM) data. We demonstrate that the real-space reconstruction and analyses of the 4-D nanodiffraction data acquired using a pixelated fast STEM detector enables quantitative determination of the details of local structural heterogeneity, including the type, size, volume fraction and spatial distribution of local ordering at the nano- to meso-scale, beyond the limits of the previous measurements using conventional detectors. We show that different types of local ordering are present in ZrCoAl glass, leading to a high degree of structural heterogeneity, with the total volume of locally ordered regions making up to ∼14% of the entire volume.

Remote epitaxy through graphene enables two-dimensional material-based layer transfer.

Epitaxy-the growth of a crystalline material on a substrate-is crucial for the semiconductor industry, but is often limited by the need for lattice matching between the two material systems. This strict requirement is relaxed for van der Waals epitaxy, in which epitaxy on layered or two-dimensional (2D) materials is mediated by weak van der Waals interactions, and which also allows facile layer release from 2D surfaces. It has been thought that 2D materials are the only seed layers for van der Waals epitaxy.

Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy.

We propose a new scanning transmission electron microscopy (STEM) technique that can realize the three-dimensional (3D) characterization of vacancies, lighter and heavier dopants with high precision. Using multislice STEM imaging and diffraction simulations of β-GaO and SrTiO, we show that selecting a small range of low scattering angles can make the contrast of the defect-containing atomic columns substantially more depth-dependent. The origin of the depth-dependence is the de-channeling of electrons due to the existence of a point defect in the atomic column, which creates extra "ripples" at low scattering angles.

Engineering 1D Quantum Stripes from Superlattices of 2D Layered Materials.

Dimensional tunability from two dimensions to one dimension is demonstrated for the first time using an artificial superlattice method in synthesizing 1D stripes from 2D layered materials. The 1D confinement of layered Sr IrO induces distinct 1D quantum-confined electronic states, as observed from optical spectroscopy and resonant inelastic X-ray scattering. This 1D superlattice approach is generalizable to a wide range of layered materials.

Nonlinear Electron-Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide.

With VO , a classic strongly correlated oxide material, a model semiconductor CdS is stretched and its electron-lattice interaction in a nonlinear manner is modulated. Optical spectroscopy is applied to probe the electronic band structure-associated parameters which is explained by the theoretical prediction based on k·p method and microscopy study. The research provides a new avenue on dynamic straining engineering.