Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films.

We report the optical properties of GaSbBi layers grown on GaSb (100) substrates with different bismuth contents of 5.8 and 8.0% Bi.

Detecting lateral composition modulation in dilute Ga(As,Bi) epilayers.

The ability to characterize a structure into the finest details in a quantitative manner is a key issue to understanding and controlling nanoscale phase separation in novel nanomaterials. In this work, we consider the detectability of lateral composition modulation (LCM), a type of nanoscale phase separation in GaAs(1-x)Bix epilayers, by x-ray diffraction (XRD). We show that the satellite peaks due to LCM are hardly detectable in reasonable time with a lab x-ray diffractometer for GaAs(1-x)Bix samples with an average x up to 25% and relative modulation up to 50%.

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi.

We report the formation and phase transformation of Bi-containing clusters in GaAs(1-x)Bi(x) epilayers upon annealing. The GaAs(1-x)Bi(x) layers were grown by molecular beam epitaxy under low (220 °C) and high (315 °C) temperatures and subsequently annealed using different temperatures and annealing times. Bi-containing clusters were identified only in the annealed samples that were grown at low temperature, revealing a relatively homogeneous size distribution.

Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures.

Unlabelled: We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xInxNyAs1 - y (x = 0.32, y = 0, 0.009, and 0.

1.32 μm mode-locked bismuth-doped fiber laser operating in anomalous and normal dispersion regimes.

We demonstrate a 1.32 μm mode-locked bismuth fiber laser operating in both anomalous and normal dispersion regimes. In anomalous dispersion regime, achieved by using 13 nm/cm linearly chirped fiber Bragg grating, the laser exhibits multiple soliton operation with pulse duration of 2.

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures.

The excitation energy-dependent nature of Raman scattering spectrum, vibration, electronic or both, has been studied using different excitation sources on as-grown and annealed n- and p-type modulation-doped Ga1 - xInxNyAs1 - y/GaAs quantum well structures. The samples were grown by molecular beam technique with different N concentrations (y = 0%, 0.9%, 1.

Dilute nitride and GaAs n-i-p-i solar cells.

We demonstrate for the first time the operation of GaInNAs and GaAs n-i-p-i doping solar cells with ion-implanted selective contacts. Multiple layers of alternate doping are grown by molecular beam epitaxy to form the n-i-p-i structure. After growth, vertical selective contacts are fabricated by Mg and Si ion implantation, followed by rapid thermal annealing treatment and fabrication into circular mesa cells.

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells.

In this study, we investigate the effect of annealing and nitrogen amount on electronic transport properties in n- and p-type-doped Ga0.68In0.32NyAs1 - y/GaAs quantum well (QW) structures with y = 0%, 0.

Picosecond bismuth-doped fiber MOPFA for frequency conversion.

We report the development of a bismuth-doped fiber master oscillator power fiber amplifier system. The system operates at 1177 nm, producing 28 ps pulses at 9.11 MHz repetition rate, with an output power of 150 mW and a peak pulse power of 580 W.

11 W single gain-chip dilute nitride disk laser emitting around 1180 nm.

We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader.

Pulse dynamics of a passively mode-locked Bi-doped fiber laser.

The pulse evolution in Bi-doped soliton fiber laser with slow and fast saturable absorber has been studied both experimentally and numerically. Semiconductor saturable absorbers with balanced slow and fast absorption recovery mechanisms exhibit a bi-temporal recovery dynamics which permits both reliable start-up of passive mode-locking and short pulse generation and stabilization. The pulse dynamics within the Bi fiber laser cavity have been investigated.

Power-scalable 1.57 microm mode-locked semiconductor disk laser using wafer fusion.

We report the first (to our knowledge) wafer-fused high-power passively mode-locked semiconductor disk laser operating at 1.57 microm wavelength. An InP-based active medium was fused with GaAs/AlGaAs distributed Bragg reflector on a 2 inch wafer level, resulting in an integrated monolithic gain mirror.

Passively mode-locked GaInNAs disk laser operating at 1220 nm.

We report an optically-pumped semiconductor disk laser passively mode-locked with a semiconductor saturable-absorber mirror. Both the absorber and the gain media were made of dilute nitride compound semiconductor, GaInNAs, which enables operation around 1.2 microm wavelengths.