Frequency-converted dilute nitride laser diodes for mobile display applications.

We demonstrate a 1240-nm GaInNAs multi-quantum well laser diode with an integrated saturable electro-absorber whose wavelength is converted to 620 nm. For conversion, we used a MgO:LN nonlinear waveguide crystal with an integrated Bragg grating in direct coupling configuration. Broadened visible spectral width and reduced speckle as well as a high extinction ratio between the below and above threshold powers were observed in passively triggered pulsed operation with smooth direct current modulation characteristics.

High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.

We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output.