Quantitative electric field mapping between electrically biased needles by scanning transmission electron microscopy and electron holography.

Stray electric fields in free space generated by two biased gold needles have been quantified in comprehensive finite-element (FE) simulations, accompanied by first moment (FM) scanning TEM (STEM) and electron holography (EH) experiments. The projected electrostatic potential and electric field have been derived numerically under geometrical variations of the needle setup. In contrast to the FE simulation, application of an analytical model based on line charges yields a qualitative understanding.

Screening of Coatings for an All-Solid-State Battery using In Situ Transmission Electron Microscopy.

With the ever-increasing use of Li-ion batteries, especially due to their adoption in electric vehicles, their safety is in prime focus. Thus, the all-solid-state batteries (ASSBs) that use solid electrolytes instead of liquid electrolytes, which reduce the risk of flammability, have been the center stage of battery research for the last few years. However, in the ASSB, the ion transportation through the solid-solid electrolyte-electrode interface poses a challenge due to contact and chemical/electrochemical stability issues.

Effects of the Heterointerface on the Growth Characteristics of a Brownmillerite SrFeO Thin Film Grown on SrRuO and SrTiO Perovskites.

Manipulation of the heterointerfacial structure and/or chemistry of transition metal oxides is of great interest for the development of novel properties. However, few studies have focused on heterointerfacial effects on the growth characteristics of oxide thin films, although such interfacial engineering is crucial to determine the growth dynamics and physical properties of oxide heterostructures. Herein, we show that heterointerfacial effects play key roles in determining the growth process of oxide thin films by overcoming the simple epitaxial strain energy.

Thermally Stable Amorphous Oxide-based Schottky Diodes through Oxygen Vacancy Control at Metal/Oxide Interfaces.

Amorphous oxide semiconductor (AOS)-based Schottky diodes have been utilized for selectors in crossbar array memories to improve cell-to-cell uniformity with a low-temperature process. However, thermal instability at interfaces between the AOSs and metal electrodes can be a critical issue for the implementation of reliable Schottky diodes. Under post-fabrication annealing, an excessive redox reaction at the ohmic interface can affect the bulk region of the AOSs, inducing an electrical breakdown of the device.

Unraveling the Origin and Mechanism of Nanofilament Formation in Polycrystalline SrTiO Resistive Switching Memories.

Three central themes in the study of the phenomenon of resistive switching are the nature of the conducting phase, why it forms, and how it forms. In this study, the answers to all three questions are provided by performing switching experiments in situ in a transmission electron microscope on thin films of the model system polycrystalline SrTiO . On the basis of high-resolution transmission electron microscopy, electron-energy-loss spectroscopy and in situ current-voltage measurements, the conducting phase is identified to be SrTi O .

Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device.

We had discovered novel resistance switching phenomena in SrCoO epitaxial thin films. We have interpreted the results in terms of the topotactic phase transformation between their insulating brownmillerite phase and the conducting perovskite phase and the existence of a rather vertical conducting filament due to its inherent layered structure. However, the rough interface observed between the SrCoO and the Au top electrode (area ~10000 μm) was assumed to result in the observed fluctuation in key switching parameters.

Tris(2-benzimidazolylmethyl)amine-Directed Synthesis of Single-Atom Nickel Catalysts for Electrochemical CO Production from CO.

The electrochemical reduction of carbon dioxide (CO ) to value-added products is a promising approach to reducing excess CO in the atmosphere. However, the development of electrocatalysts for highly selective and efficient electrochemical CO reduction has been challenging because protons are usually easier to reduce than CO in an aqueous electrolyte. Recently, single-atom catalysts (SACs) have been suggested as candidate CO reduction catalysts due to their unique catalytic properties.

Real-Time Characterization Using in situ RHEED Transmission Mode and TEM for Investigation of the Growth Behaviour of Nanomaterials.

A novel characterization technique using both in situ reflection high-energy electron diffraction (RHEED) transmission mode and transmission electron microscopy (TEM) has been developed to investigate the growth behaviour of semiconductor nanostructures. RHEED employed in transmission mode enables the acquisition of structural information during the growth of nanostructures such as nanorods. Such real-time observation allows the investigation of growth mechanisms of various nanomaterials that is not possible with conventional ex situ analytical methods.

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory.

An oxide-based resistance memory is a leading candidate to replace Si-based flash memory as it meets the emerging specifications for future memory devices. The non-uniformity in the key switching parameters and low endurance in conventional resistance memory devices are preventing its practical application. Here, a novel strategy to overcome the aforementioned challenges has been unveiled by tuning the growth direction of epitaxial brownmillerite SrFeO thin films along the SrTiO [111] direction so that the oxygen vacancy channels can connect both the top and bottom electrodes rather directly.

Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.

Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters-including set voltage, reset voltage, and resistance-in their low- and high-resistance states. One of the most commonly used methods to overcome this limitation is to introduce inhomogeneity. By contrast, in this paper, we obtained uniform resistive switching parameters and sufficiently low forming voltage by maximizing the uniformity of an epitaxial thin film.

Microtube Light-Emitting Diode Arrays with Metal Cores.

We report the fabrication and characteristics of vertical microtube light-emitting diode (LED) arrays with a metal core inside the devices. To make the LEDs, gallium nitride (GaN)/indium gallium nitride (In(x)Ga(1-x)N)/zinc oxide (ZnO) coaxial microtube LED arrays were grown on an n-GaN/c-aluminum oxide (Al2O3) substrate. The microtube LED arrays were then lifted-off the substrate by wet chemical etching of the sacrificial ZnO microtubes and the silicon dioxide (SiO2) layer.

Variable-color light-emitting diodes using GaN microdonut arrays.

Microdonut-shaped GaN/Inx Ga1-x N light-emitting diode (LED) microarrays are fabricated for variable-color emitters. The figure shows clearly donut-shaped light emission from all the individual microdonut LEDs. Furthermore, microdonut LEDs exhibit spatially-resolved blue and green EL colors, which can be tuned by either controlling the external bias voltage or changing the size of the microdonut LED.

High-resolution observation of nucleation and growth behavior of nanomaterials using a graphene template.

By using graphene as an electron beam-transparent substrate for both nanomaterial growth and transmission electron microscopy (TEM) measurements, we investigate initial growth behavior of nanomaterials. The direct growth and imaging method using graphene facilitate atomic-resolution imaging of nanomaterials at the very early stage of growth. This enables the observation of the transition in crystal structure of ZnO nuclei and the formation of various defects during nanomaterial growth.