A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited HfZrO Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors.

The chemical, physical, and electrical properties of the atomic layer deposited HfZrO thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing HfZrO films with the TDMA precursors results in lower C concentration and slightly larger grain size.

Modeling of Negative Capacitance in Ferroelectric Thin Films.

The negative capacitance (NC) effect in ferroelectric thin films has attracted a great deal of attention from the material and semiconductor device communities because it could be a possible solution to the impending problems related to field-effect transistor power consumption and dynamic random-access memory charge loss. A short discussion on the fundamental premise of the NC effect is presented. A phase-field model based on the time-dependent Ginzburg-Landau (TDGL) formalism in conjunction with the Chensky-Tarasenko (C-T) formalism for multidomain configuration is then developed to reveal the subtle correlation between the domain wall motion and NC effect for different thicknesses of ferroelectric and dielectric films.