Background/aim: Adoptive cell therapy using antigen-specific T cells is a promising treatment modality for cancer patients. Various methods to isolate specific T cells and identify corresponding T cell receptor (TCR) sequences are known. This study aimed to identify antigen-specific TCR from T cells isolated using carboxyfluorescein succinimidyl ester (CFSE), which marks proliferating activated T cells.
View Article and Find Full Text PDFChallenges in the development of a multi-level memory (MM) device for multinary arithmetic computers have posed an obstacle to low-power, ultra-high-speed operation. For the effective transfer of a huge amount of data between arithmetic and storage devices, optical communication technology represents a compelling solution. Here, by replicating a floating gate architecture with CdSe/ZnS type-I core/shell quantum dots (QDs), a 2D-0D hybrid optical multi-level memory (OMM) device operated is demonstrated by laser pulses.
View Article and Find Full Text PDFObjective: Given the rapid growth of the wearable healthcare device market, we examined the associations among health-related and technology-related characteristics of using wearable healthcare devices and demonstrated how the associations differ between the US and Korean users.
Methods: Online self-administered surveys were conducted with 4098 participants (3035 in the US and 1063 in Korea) who were recruited through two online survey service providers based on quota sampling. The primary outcome was the use of wearable healthcare devices.
Precise control over the polarity of transistors is a key necessity for the construction of complementary metal-oxide-semiconductor circuits. However, the polarity control of 2D transistors remains a challenge because of the lack of a high-work-function electrode that completely eliminates Fermi-level pinning at metal-semiconductor interfaces. Here, a creation of clean van der Waals contacts is demonstrated, wherein a metallic 2D material, chlorine-doped SnSe (Cl-SnSe ), is used as the high-work-function contact, providing an interface that is free of defects and Fermi-level pinning.
View Article and Find Full Text PDFThe probing of fundamental photophysics is a key prerequisite for the construction of diverse optoelectronic devices and circuits. To date, though, photocarrier dynamics in 2D materials remains unclear, plagued primarily by two issues: a large exciton binding energy, and the lack of a suitable system that enables the manipulation of excitons. Here, a WSe -based phototransistor with an asymmetric split-gate configuration is demonstrated, which is named the "asymmetry field-effect phototransistor" (AFEPT).
View Article and Find Full Text PDFPolarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe/ReSe van der Waals heterostructure.
View Article and Find Full Text PDFIn patients with intraoperative massive bleeding, the effects of fluid and blood volume on postoperative pulmonary edema are uncertain. Patients with intraoperative massive bleeding who had undergone a non-cardiac surgery in five hospitals were enrolled in this study. We evaluated the association of postoperative pulmonary edema risk and intra- and post-operatively administered fluid and blood volumes in patients with intraoperative massive bleeding.
View Article and Find Full Text PDFTwo-dimensional transition metal dichalcogenide semiconductors are very promising candidates for future electronic applications with low power consumption due to a low leakage current and high on-off current ratio. In this study, we suggest a complementary circuit consisting of ambipolar WSe and MoS field-effect transistors (FETs), which demonstrate dual functions of a frequency doubler and single inversion AND (SAND) logic gate. In order to reduce the power consumption, a high-quality thin -BN single crystal is used as a gate dielectric that leads to a low operating voltage of less than 5 V.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2020
Two-dimensional transition metal dichalcogenides (TMDCs) have emerged as promising materials for next-generation electronics due to their excellent semiconducting properties. However, high contact resistance at the metal-TMDC interface plagues the realization of high-performance devices. Here, an effective metal-interlayer-semiconductor (MIS) contact is demonstrated, wherein an ultrathin ZnO interlayer is inserted between the metal electrode and MoS, providing damage-free and clean interfaces at electrical contacts.
View Article and Find Full Text PDFDendritic cells (DCs) are the most potent professional antigen (Ag)-presenting cells and inducers of T cell-mediated immunity. A previous microarray analysis identified PDZ and LIM domain protein 4 (Pdlim4) as a candidate marker for DC maturation. The aim of this study was to investigate whether Pdlim4 influences DC migration and maturation.
View Article and Find Full Text PDFDendritic cells (DCs) are the most potent professional antigen presenting cells and inducers of T cell-mediated immunity. However, few specific markers of mature DCs (mDC) have been reported. A previous microarray analysis revealed expression of mDC-specific genes and identified Rsad2 (radical S-adenosyl methionine domain containing 2) as a candidate specific marker for DC maturation.
View Article and Find Full Text PDFThere is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure.
View Article and Find Full Text PDFNonvolatile resistive memory devices based on a new low bandgap donor-acceptor (D-A) conjugated polymer, poly(()-6,6'-bis(2,3-dihydrothieno[3,4-][1,4]dioxine-5-yl)-1,1'-bis(2-octyldodecyl)-[3,3'-biindolinyi-dene]-2,2'-dione) (PIDED), which are fabricated and operated in ambient air, are reported. The D-A conjugated polymer is synthesized from 2,3-dihydrothieno[3,4-][1,4]dioxine and isoindigo as an electron donor and an electron acceptor, respectively, using CH-arylation polymerization. The devices show nonvolatile, unipolar resistive switching behaviors with a high on/off current ratio (∼10), excellent endurance cycles (>200 cycles), and a long retention time (>10 s) in ambient air.
View Article and Find Full Text PDFA 51-year-old man with a 1-month history of lower back pain and radiating pain visited to our pain clinic. A magnetic resonance imaging (MRI) scan demonstrated a cyst like mass at the level of the L4-5 interspace and compression of the thecal sac and the nerve root on the right side. We performed percutaneous needle aspiration of the lumbar zygapophyseal joint synovial cyst under fluoroscopic guidance.
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