Beam shaping for ultra-compact waveguide crossings on monolithic silicon photonics platform.

A beam shaping approach has been implemented to realize high-performance waveguide crossings based on cosine tapers. Devices with a compact footprint of 4.7µ×4.

Fabrication-constrained nanophotonic inverse design.

A major difficulty in applying computational design methods to nanophotonic devices is ensuring that the resulting designs are fabricable. Here, we describe a general inverse design algorithm for nanophotonic devices that directly incorporates fabrication constraints. To demonstrate the capabilities of our method, we designed a spatial-mode demultiplexer, wavelength demultiplexer, and directional coupler.

Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities.

A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium nanowire light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudoheterostructure, and high-Q nanophotonic cavity. Our nanowire structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2000.

Ge microdisk with lithographically-tunable strain using CMOS-compatible process.

We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions.

Inverse design and implementation of a wavelength demultiplexing grating coupler.

Nanophotonics has emerged as a powerful tool for manipulating light on chips. Almost all of today's devices, however, have been designed using slow and ineffective brute-force search methods, leading in many cases to limited device performance. In this article, we provide a complete demonstration of our recently proposed inverse design technique, wherein the user specifies design constraints in the form of target fields rather than a dielectric constant profile, and in particular we use this method to demonstrate a new demultiplexing grating.

Multimode nanobeam cavities for nonlinear optics: high quality resonances separated by an octave.

We demonstrate the design, fabrication and characterization of nanobeam cavities with multiple higher order modes. Designs with two high Q modes with frequency separations of an octave are introduced, and we fabricate such cavities exhibiting resonances with wavelength separations of up to 740 nm.

Nonlinear frequency conversion using high-quality modes in GaAs nanobeam cavities.

We demonstrate the design, fabrication, and characterization of nanobeam photonic crystal cavities in (111)-GaAs with multiple high-Q modes, with large frequency separations (up to 740 nm in experiment, i.e., a factor of 1.

Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles.

Semiconductor heterostructures play a vital role in photonics and electronics. They are typically realized by growing layers of different materials, complicating fabrication and limiting the number of unique heterojunctions on a wafer. In this Letter, we present single-material nanowires which behave exactly like traditional heterostructures.

Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode.

Low-power and electrically controlled optical sources are vital for next generation optical interconnect systems to meet strict energy demands. Current optical transmitters consisting of high-threshold lasers plus external modulators consume far too much power to be competitive with future electrical interconnects. Here we demonstrate a directly modulated photonic crystal nanocavity light-emitting diode (LED) with 10 GHz modulation speed and less than 1 fJ per bit energy of operation, which is orders of magnitude lower than previous solutions.

Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications.

Si wire arrays are a promising architecture for solar-energy-harvesting applications, and may offer a mechanically flexible alternative to Si wafers for photovoltaics. To achieve competitive conversion efficiencies, the wires must absorb sunlight over a broad range of wavelengths and incidence angles, despite occupying only a modest fraction of the array's volume. Here, we show that arrays having less than 5% areal fraction of wires can achieve up to 96% peak absorption, and that they can absorb up to 85% of day-integrated, above-bandgap direct sunlight.