In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min.

Hot-wire chemical vapor deposition was used to deposit in situ-doped amorphous silicon layers for poly-Si/SiO passivating contacts at a high deposition rate of 42 nm/min. We investigated the influence of a varied phosphine gas (PH) concentration during deposition on (i) the silicon film properties and (ii) the passivating contact performances. The microstructural film properties were characterized before and after a high-temperature crystallization step to transform amorphous silicon films into polycrystalline silicon films.