Low-Temperature Annealing of CdZnTeSe under Bias.

We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector's resistance and space-charge accumulation. This could potentially lead to the control and improvement of the electronic properties of the detector because the changes are accompanied with the reduction in the bulk dark current and surface leakage current.

Spectral Dependence of the Photoplastic Effect in CdZnTe and CdZnTeSe.

We studied the spectral dependence of the Vickers microhardness HV0.025 of CdZnTe and CdZnTeSe samples upon illumination and found out that it increases over the entire applied spectral range of 1540-750 nm. We also found out that the photoconductivity and microhardness are correlated.

Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials.

This paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of maximum transmittance of low intensity light passing through a sample under a voltage bias. Here, the sample is located between rotating crossed polarizers, and camera images are obtained at each point to determine the electric field.

Influence of Surface and Bulk Defects on Contactless Resistivity Measurements of CdTe and Related Compounds.

We analyzed the influence of parameters of deep levels in the bulk and conditions on the surface on transient charge responses of semi-insulating samples (CdTe and GaAs). We studied the dependence on the applied bias step used for the experimental evaluation of resistivity in contactless measurement setups. We used simulations based on simultaneous solutions of 1D drift diffusion and Poisson's equations as the main investigation tool.

Evaluation of CdZnTeSe as a high-quality gamma-ray spectroscopic material with better compositional homogeneity and reduced defects.

X- and gamma-ray detectors have broad applications ranging from medical imaging to security, non-proliferation, high-energy physics and astrophysics. Detectors with high energy resolution, e.g.

Dynamics of native oxide growth on CdTe and CdZnTe X-ray and gamma-ray detectors.

We studied the growth of the surface oxide layer on four different CdTe and CdZnTe X-ray and gamma-ray detector-grade samples using spectroscopic ellipsometry. We observed gradual oxidization of CdTe and CdZnTe after chemical etching in bromine solutions. From X-ray photoelectron spectroscopy measurements, we found that the oxide consists only of oxygen bound to tellurium.

Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays.

This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes. We newly demonstrate the influence of a high flux of X-rays and simultaneous 1200-nm LED illumination on the spectroscopic properties of a CdZnTe detector. CdZnTe detectors operating under high radiation fluxes usually suffer from the polarization effect, which occurs due to a screening of the internal electric field by a positive space charge caused by photogenerated holes trapped at a deep level.