Interdiffusion and Doping Gradients at the Buffer/Absorber Interface in Thin-Film Solar Cells.

An accurate determination of the net dopant concentration in photovoltaic absorbers is critical for understanding and optimizing solar cell performance. The complex device structure of multilayered thin-film solar cells poses challenges to determine the dopant concentration. Capacitance-voltage ( C- V) measurements of Cu(In,Ga)Se thin-film solar cells typically yield depth-dependent apparent doping profiles and are not consistent with Hall measurements of bare absorbers.

Extended ultrahigh-Q-cavity diode laser.

We report on a study of a 698 nm extended cavity semiconductor laser with intracavity narrowband optical feedback from a whispering gallery mode resonator. This laser comprises an ultrahigh-Q (>10(10)) resonator supporting stimulated Rayleigh scattering, a diffraction grating wavelength preselector, and a reflective semiconductor amplifier. Single longitudinal mode lasing is characterized with sub-kilohertz linewidth and a 9 nm coarse tuning range.