A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping.

We report on ultra-violet (UV) photodetectors based on BaO nanoparticles by the detailed investigation of band gap and photoluminescence properties. The BaO nanomaterials were fabricated by the modified sol-gel technique. The innovation of co-doping can modulate the photoluminescence or sensing properties by narrowing the band gap related to enhancing the high carrier concentration, higher electronic lifetime, and low carriers recombination.