Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe) (Sb Te ) Lamellae.

The possibility to engineer (GeTe) (Sb Te ) phase-change materials to co-host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel multifunctional devices. Here an experimental and theoretical study of epitaxial (GeTe) (Sb Te ) with GeTe-rich composition is presented.

Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films.

Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-SbTe tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material with outstanding properties is still ongoing. This search is relatively crucial for embedded memory applications where the crystallization temperature of the active material has to be higher to surpass the soldering threshold.

Polytriphenylamine composites for energy storage electrodes: effect of pendant backbone polymer architecture of the electroactive group.

Polymers are an increasingly used class of materials in semiconductors, photovoltaics and energy storage. Polymers bearing triphenylamine (TPA) or its derivatives in their structures have shown promise for application in electrochemical energy storage devices. The aim of this work is to systematically synthesize polymers bearing TPA units either as pendant groups or directly along the backbone of the polymer and evaluate their performance as electrochemical energy storage electrode materials.

Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires.

Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, that is, strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research.

Strain Relaxation in "2D/2D and 2D/3D Systems": Highly Textured Mica/BiTe, SbTe/BiTe, and BiTe/GeTe Heterostructures.

Strain engineering as a method to control functional properties has seen in the last decades a surge of interest. Heterostructures comprising 2D-materials and containing van der Waals(-like) gaps were considered unsuitable for strain engineering. However, recent work on heterostructures based on BiTe, SbTe, and GeTe showed the potential of a different type of strain engineering due to long-range mutual straining.

Scalable PbS Quantum Dot Solar Cell Production by Blade Coating from Stable Inks.

The recent development of phase transfer ligand exchange methods for PbS quantum dots (QD) has enhanced the performance of quantum dots solar cells and greatly simplified the complexity of film deposition. However, the dispersions of PbS QDs (inks) used for film fabrication often suffer from colloidal instability, which hinders large-scale solar cell production. In addition, the wasteful spin-coating method is still the main technique for the deposition of QD layer in solar cells.

Resolving hydrogen atoms at metal-metal hydride interfaces.

Hydrogen as a fuel can be stored safely with high volumetric density in metals. It can, however, also be detrimental to metals, causing embrittlement. Understanding fundamental behavior of hydrogen at the atomic scale is key to improve the properties of metal-metal hydride systems.

Chemical Solution Deposition of Ordered 2D Arrays of Room-Temperature Ferrimagnetic Cobalt Ferrite Nanodots.

Over the past decades, the development of nano-scale electronic devices and high-density memory storage media has raised the demand for low-cost fabrication methods of two-dimensional (2D) arrays of magnetic nanostructures. Here, we present a chemical solution deposition methodology to produce 2D arrays of cobalt ferrite (CFO) nanodots on Si substrates. Using thin films of four different self-assembled block copolymers as templates, ordered arrays of nanodots with four different characteristic dimensions were fabricated.

A rhombohedral ferroelectric phase in epitaxially strained HfZrO thin films.

Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at the nanoscale into next-generation memory and logic devices. This is because their ferroelectric polarization becomes more robust as the size is reduced, exposing a type of ferroelectricity whose mechanism still remains to be understood. Thin films with increased crystal quality are therefore needed.

Electron Mobility of 24 cm V s in PbSe Colloidal-Quantum-Dot Superlattices.

Colloidal quantum dots (CQDs) are nanoscale building blocks for bottom-up fabrication of semiconducting solids with tailorable properties beyond the possibilities of bulk materials. Achieving ordered, macroscopic crystal-like assemblies has been in the focus of researchers for years, since it would allow exploitation of the quantum-confinement-based electronic properties with tunable dimensionality. Lead-chalcogenide CQDs show especially strong tendencies to self-organize into 2D superlattices with micrometer-scale order, making the array fabrication fairly simple.

Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal.

Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids.

Strain engineering of van der Waals heterostructures.

Modifying the strain state of solids allows control over a plethora of functional properties. The weak interlayer bonding in van der Waals (vdWaals) materials such as graphene, hBN, MoS, and BiTe might seem to exclude strain engineering, since strain would immediately relax at the vdWaals interfaces. Here we present direct observations of the contrary by showing growth of vdWaals heterostructures with persistent in-plane strains up to 5% and we show that strain relaxation follows a not yet reported process distinctly different from strain relaxation in three-dimensionally bonded (3D) materials.

Dynamic reconfiguration of van der Waals gaps within GeTe-SbTe based superlattices.

Phase-change materials based on GeSbTe show unique switchable optoelectronic properties and are an important contender for next-generation non-volatile memories. Moreover, they recently received considerable scientific interest, because it is found that a vacancy ordering process is responsible for both an electronic metal-insulator transition and a structural cubic-to-trigonal transition. GeTe-SbTe based superlattices, or specifically their interfaces, provide an interesting platform for the study of GeSbTe alloys.

Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin films.

Using reflection high-energy electron diffraction (RHEED), the growth onset of molecular beam epitaxy (MBE) deposited germanium telluride (GeTe) film on Si(111)-(√3 × √3)R30°-Sb surfaces is investigated, and a larger than expected in-plane lattice spacing is observed during the deposition of the first two molecular layers. High-resolution transmission electron microscopy (HRTEM) confirms that the growth proceeds via closed layers, and that those are stable after growth. The comparison of the experimental Raman spectra with theoretical calculated ones allows assessing the shift of the phonon modes for a quasi-free-standing ultra-thin GeTe layer with larger in-plane lattice spacing.

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices.

The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties.

Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb₂Te₃ superlattices.

GeTe-Sb2Te3 superlattices are nanostructured phase-change materials which are under intense investigation for non-volatile memory applications. They show superior properties compared to their bulk counterparts and significant efforts exist to explain the atomistic nature of their functionality. The present work sheds new light on the interface formation between GeTe and Sb2Te3, contradicting previously proposed models in the literature.

Reversible amorphous-crystalline phase changes in a wide range of Se(1-x)Te(x) alloys studied using ultrafast differential scanning calorimetry.

The reversible amorphous-crystalline phase change in a chalcogenide material, specifically the Se1-xTex alloy, has been investigated for the first time using ultrafast differential scanning calorimetry. Heating rates and cooling rates up to 5000 K/s were used. Repeated reversible amorphous-crystalline phase switching was achieved by consecutively melting, melt-quenching, and recrystallizing upon heating.

Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate.

Sb2Te3 films are used for studying the epitaxial registry between two-dimensionally bonded (2D) materials and three-dimensional bonded (3D) substrates. In contrast to the growth of 3D materials, it is found that the formation of coincidence lattices between Sb2Te3 and Si(111) depends on the geometry and dangling bonds of the reconstructed substrate surface. Furthermore, we show that the epitaxial registry can be influenced by controlling the Si(111) surface reconstruction and confirm the results for ultrathin films.