Mid-infrared silicon-on-insulator waveguides with single-mode propagation over an octave of frequency.

Increasing the working optical bandwidth of a photonic circuit is important for many applications, in particular chemical sensing at mid-infrared wavelengths. This useful bandwidth is not only limited by the transparency range of waveguide materials, but also the range over which a waveguide is single or multimoded for predictable circuit behaviour. In this work, we show the first experimental demonstration of "endlessly single-mode" waveguiding in silicon photonics.

Broadband 2 × 2 multimode interference coupler for mid-infrared wavelengths.

Beam splitters are core components of photonic integrated circuits and are often implemented with multimode interference couplers. While these devices offer high performance, their operational bandwidth is still restrictive for sensing applications in the mid-infrared wavelength range. Here we experimentally demonstrate a subwavelength-structured 2×2 multimode interference coupler with high performance in the 3.

Thick BaTiO Epitaxial Films Integrated on Si by RF Sputtering for Electro-Optic Modulators in Si Photonics.

Thick epitaxial BaTiO films ranging from 120 nm to 1 μm were grown by off-axis RF magnetron sputtering on SrTiO-templated silicon-on-insulator (SOI) substrates for use in electro-optic applications, where such large thicknesses are necessary. The films are of high quality, rivaling those grown by molecular beam epitaxy (MBE) in crystalline quality, but can be grown 10 times faster. Extraction of lattice parameters from geometric phase analysis of atomic-resolution scanning transmission electron microscopy images revealed how the in-plane and out-of-plane lattice spacings of sputtered BaTiO changes as a function of layer position within a thick film.

Nanoelectromechanical relay without pull-in instability for high-temperature non-volatile memory.

Emerging applications such as the Internet-of-Things and more-electric aircraft require electronics with integrated data storage that can operate in extreme temperatures with high energy efficiency. As transistor leakage current increases with temperature, nanoelectromechanical relays have emerged as a promising alternative. However, a reliable and scalable non-volatile relay that retains its state when powered off has not been demonstrated.