Publications by authors named "Jamie D Phillips"

. Brain-machine interfaces (BMIs) have the potential to restore motor function but are currently limited by electrode count and long-term recording stability. These challenges may be solved through the use of free-floating 'motes' which wirelessly transmit recorded neural signals, if power consumption can be kept within safe levels when scaling to thousands of motes.

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Arrays of floating neural sensors with high channel count that cover an area of square centimeters and larger would be transformative for neural engineering and brain-machine interfaces. Meeting the power and wireless data communications requirements within the size constraints for each neural sensor has been elusive due to the need to incorporate sensing, computing, communications, and power functionality in a package of approximately 100 micrometers on a side. In this work, we demonstrate a near infrared optical power and data communication link for a neural recording system that satisfies size requirements to achieve dense arrays and power requirements to prevent tissue heating.

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Dual-junction GaAs photovoltaic (PV) cells and modules at sub millimeter scale are demonstrated for efficient wireless power transfer for Internet of Things (IoT) and bio-implantable applications under low-flux illumination. The dual-junction approach meets demanding requirements for these applications by increasing the output voltage per cell with reduced area losses from isolation and interconnects. A single PV cell (150 μm × 150 μm) based on the dual-junction design demonstrates power conversion efficiency above 22% with greater than 1.

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Photovoltaic modules at the mm-scale are demonstrated in this work to power wirelessly interconnected mm-scale sensor systems operating under low flux conditions, enabling applications in the Internet of Things and biological sensors. Module efficiency is found to be limited by perimeter recombination for individual cells, and shunt leakage for the series-connected module configuration. We utilize GaAs and AlGaAs junction barrier isolation between interconnected cells to dramatically reduce shunt leakage current.

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The design and characterization of mm-scale GaAs photovoltaic cells are presented and demonstrate highly efficient energy harvesting in the near infrared. Device performance is improved dramatically by optimization of the device structure for the near-infrared spectral region and improving surface and sidewall passivation with ammonium sulfide treatment and subsequent silicon nitride deposition. The power conversion efficiency of a 6.

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Wireless biomedical implantable devices on the mm-scale enable a wide range of applications for human health, safety, and identification, though energy harvesting and power generation are still looming challenges that impede their widespread application. Energy scavenging approaches to power biomedical implants have included thermal [1-3], kinetic [4-6], radio-frequency [7-11] and radiative sources [12-14]. However, the achievement of efficient energy scavenging for biomedical implants at the mm-scale has been elusive.

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GaAs photovoltaics are promising candidates for indoor energy harvesting to power small-scale (≈1 mm) electronics. This application has stringent requirements on dark current, recombination, and shunt leakage paths due to low-light conditions and small device dimensions. The power conversion efficiency and the limiting mechanisms in GaAs photovoltaic cells under indoor lighting conditions are studied experimentally.

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Silicon photovoltaics are prospective candidates to power mm-scale implantable devices. These applications require excellent performance for small-area cells under low-flux illumination condition, which is not commonly achieved for silicon cells due to shunt leakage and recombination losses. Small area (1-10 mm) silicon photovoltaic cells are studied in this work, where performance improvements are demonstrated using a surface n-type doped emitter and SiN passivation.

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We computationally study a normal incidence narrowband transmission filter based on a subwavelength dielectric grating that operates through Fano interference between supported guided leaky modes of the system. We characterize the filtering capabilities as the cross section of the grating is manipulated and suggest techniques for experimental demonstration. Using group theory, we study the plane wave coupling to the supported modes that leads to broadband reflectance and narrowband transmittance responses for rectangular, pentagonal, rhomboidal, and right trapezoidal cross-sectional geometries.

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This paper presents a voltage-controlled, highquality factor (Q) composite thin-film bulk acoustic resonator (FBAR) at 1.28 GHz. The composite FBAR consists of a thin layer of barium strontium titanate (BST) that is sandwiched between two electrodes deposited on a silicon-on-insulator (SOI) wafer.

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