Preparation of VO-Ink for the Fabrication of VO Thin Films by the Spin Coating Method.

This article reports the preparation of VO ink via a novel chemical route. The prepared VO ink has been spin coated for the synthesis of VO thin films on glass substrates. The synthesized VO thin films were annealed at 300-400 °C in air and characterized by different techniques.

Numerical evaluation and optimization of high sensitivity CuCdSnSe photodetector.

Copper cadmium tin selenide (CuCdSnSe) based photodetector (PD) has been explored with the solar cell capacitance simulator (SCAPS-1D). Herein, cadmium sulfide (CdS) and molybdenum disulfide (MoS) are used as a window and back surface field (BSF) layers, respectively. The physical attributes, such as width, carrier density and bulk defects have been adjusted to attain the optimal conditions.

Numerical Expedition on the Potential of AgBiS-Based Thin Film Solar Cells Employing Different Carrier Transport Layers.

In this study, a photovoltaic (PV) device has been developed by using AgBiS as the key material. The simulation of the photovoltaic cell has been performed using the SCAPS-1D simulator to analyze the impact of each layer. The design incorporates three window layers, CdS, InS, and ZnSe, alongside six familiar compounds, AlSb, CuGaSe (CGS), CuS, MoS, SbS, and WSe, as the back surface field (BSF) layers.

Design and simulation of a high performance AgCuS jalpaite-based photodetector.

This work provides a comprehensive investigation by using simulations and performance analysis of a high performance and narrowband AgCuS photodetector (PD) that operates in the near-infrared (NIR) region and is built using WS and BaSi semiconductors. Across its operational wavelength range, a comprehensive assessment of the device's electrical and optical properties such as photocurrent, open-circuit voltage, quantum efficiency, responsivity and detectivity is methodically carried out. Furthermore, a thorough investigation has been conducted into the impact of many parameters, including width, carrier density and defects of various layers.

Design and optimization of a high efficiency CdTe-FeSi based double-junction two-terminal tandem solar cell.

This article theoretically demonstrates an enormously efficient CdTe-FeSi based dual-junction tandem solar cell accompanied by slender semiconductor layers. The peak efficiency of the device has been ensured through the optimization of its various attributes of window, CdTe (bandgap 1.5 eV) top absorber, FeSi (bandgap 0.

Synthesis of Transparent CuI Thin Films by a Facile Low-Cost High Pressure (HP)-PECVD Method at Room Temperature for the Application in Solar Cells.

Copper iodide (CuI) thin films were prepared on a glass substrate by a facile high pressure (HP)-PECVD method at room temperature. For this, CuI powder was dissolved in CH CN. The CuI vapor with plasma was investigated by Optical Emission Spectroscopic (OES) data for identifying the species in the plasma.

Numerical studies on a ternary AgInTe chalcopyrite thin film solar cell.

This paper theoretically outlines a new -AlSb/-AgInTe/-BaSi solar cell. The dominance of several factors such as depth, carrier density and defects of every layer on the photovoltaic (PV) outcome has been ascertained applying Solar Cell Capacitance Simulator (SCAPS)-1D computer-based simulator. The AgInTe (AIT) solar cell has been probed for finding the role of BaSi as a back surface field (BSF) layer.

Concurrent investigation of antimony chalcogenide (SbSe and SbS)-based solar cells with a potential WS electron transport layer.

Antimony (Sb) chalcogenides such as antimony selenide (SbSe) and antimony sulfide (SbS) have distinct properties to be used as absorber semiconductors for harnessing solar energy including high absorption coefficient, tunable bandgap, low toxicity, phase stability. The potentiality of SbSe and SbS as absorber material in Al/FTO/SbSe(or SbS)/Au heterojunction solar cells (HJSCs) with 2D tungsten disulfide (WS) electron transport layer (ETL) layer has been investigated numerically using SCAPS-1D solar simulator. A systematic investigation of the impact of physical properties of each active material of SbSe, SbS and WS on photovoltaic parameters including layer thickness, carrier doping concentration, bulk defect density, interface defect density, carrier generation, and recombination.

Theoretical insights into a high-efficiency SbSe-based dual-heterojunction solar cell.

Here, we manifest the design and simulation of an -ZnSe/-SbSe/ -AgInTe dual-heterojunction (DH) solar cell which exhibits a prominent efficiency. The performance of the solar cell has been assessed with reported experimental parameters using SCAPS-1D simulator by varying thickness, doping concentration and defect density in each layer. The proposed structure shows an efficiency of 38.

Stress-induced phase-alteration in solution processed indium selenide thin films during annealing.

This article demonstrates the successful synthesis of indium selenide thin films by a spin coating method in air using thiol-amine cosolvents. The synthesized films encountered a transformation from β-InSe to γ-InSe phase due to mechanical stress during annealing as confirmed from XRD and EDS analysis. The SEM study ensured the homogeneity and uniformity of surface morphology of both phases.

Synthesis of Self-Assembled Randomly Oriented VO Nanowires on a Glass Substrate by a Spin Coating Method.

Randomly oriented vanadium dioxide (VO) nanowires were produced on a glass substrate by spin coating from a cosolvent. SEM studies reveal that highly dense VO nanowires were grown at an annealing temperature of 400 °C. X-ray diffraction (XRD) provides evidence of the high crystallinity of the VO nanowires-embedded VO thin films on the glass substrate at 400 °C.

Solution-Processed Synthesis of Copper Oxide (Cu O) Thin Films for Efficient Photocatalytic Solar Water Splitting.

This article reports a solution-processed synthesis of copper oxide (Cu O) to be used as a potential photocathode for solar hydrogen production in the solar water-splitting system. Cu O thin films were synthesized through the reduction of copper iodide (CuI) thin films by sodium hydroxide (NaOH), which were deposited by the spin coating method from CuI solution in a polar aprotic solvent (acetonitrile). The phase and crystalline quality of the synthesized Cu O thin films prepared at various annealing temperatures were investigated using various techniques.

Electronic Structure of In Se Electron Transport Layer for Chalcogenide/p-Si Heterojunction Solar Cells.

In this article, we perform density functional theory calculation to investigate the electronic and optical properties of newly reported In Se compound using CAmbridge Serial Total Energy Package (CASTEP). Structural parameters obtained from the calculations agree well with the available experimental data, indicating their stability. In the band structure of In Se ( = 0, 0.

Nafion-Modified PEDOT:PSS as a Transparent Hole-Transporting Layer for High-Performance Crystalline-Si/Organic Heterojunction Solar Cells with Improved Light Soaking Stability.

We demonstrate the chemistry of amphiphilic perfluorosulfonic copolymer Nafion-coated conductive poly(3,4-ethyelenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and its effect on the photovoltaic performance of PEDOT:PSS/crystalline Si (c-Si) heterojunction solar cells. The highly hydrophilic sulfonate group of insulating, chemically stable Nafion interacts with PSS in PEDOT:PSS, which reduce the Coulombic interaction between PEDOT and PSS. The highly hydrophobic fluorocarbon backbone of Nafion favorably interacts with hydrophobic PEDOT of PEDOT:PSS.