Binary mask designs with single- and double-layer absorber stacks for extreme ultraviolet lithography and actinic inspection.

In this study, we propose binary mask (BIM) designs with single- and double-layer absorber stacks with high optical contrast at a wavelength of 13.5 nm for use in extreme ultraviolet lithography (EUVL) and actinic defect inspection. The optimum thickness of the absorber stack was estimated using a method based on the transfer matrix.