Probing the Origin of Light-Enhanced Ion Diffusion in Halide Perovskites.

Organic-inorganic hybrid halide perovskites have emerged recently as highly promising materials for optoelectronics such as photovoltaics and photodetectors. A unique feature of these materials is ion diffusion that directly impacts the optoelectronic process by affecting the charge transport and trapping. In order to shed light on the ionic diffusion behavior, the hybrid perovskites MAPbI and MAPbI with minor doping of phenyl-C61-butyric acid methyl-ester (MAPbI-PCBM) thin-film capacitors were investigated in the presence of steady and dynamic visible illumination of different intensities.

High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Subnanometer Thick AlO Tunnel Barriers Fabricated Using Atomic Layer Deposition.

Pinhole-free and defect-free ultrathin dielectric tunnel barriers (TBs) are a key to obtaining high-tunneling magnetoresistance (TMR) and efficient switching in magnetic tunnel junctions (MTJs). Among others, atomic layer deposition (ALD) provides a unique approach for the fabrication of ultrathin TBs with several advantages including atomic-scale control over the TB thickness, conformal coating, and a low defect density. Motivated by this, this work explores the fabrication and characterization of spin-valve Fe/ALD-AlO/Fe MTJs with an ALD-AlO TB thickness of 0.

Switching On/Off Negative Capacitance in Ultrathin Ferroelectric/Dielectric Capacitors.

Ferroelectric (FE) and dielectric (DE) insulator bilayer stacks provide a promising gate for low-power microelectronic devices. To fully realize the FE polarization switching, the DE layer must be ultrathin in the FE/DE bilayer stack. Motivated by this, this work presents the first successful fabrication and characterization of Fe/FeO/AlO/Fe FE/DE bilayer capacitors using in vacuo atomic layer deposition (ALD) with a total FE/DE stack thickness <3-4 nm.

Effect of AlO Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using Atomic Layer Deposition.

Metal/insulator/metal (M/I/M) trilayers of Al/MgO/Al with ultrathin MgO in the thickness range of 2.20-4.40 nm were fabricated using sputtering and atomic layer deposition (ALD).

Probing the Dielectric Properties of Ultrathin Al/AlO/Al Trilayers Fabricated Using in Situ Sputtering and Atomic Layer Deposition.

Dielectric properties of ultrathin AlO (1.1-4.4 nm) in metal-insulator-metal (M-I-M) Al/AlO/Al trilayers fabricated in situ using an integrated sputtering and atomic layer deposition (ALD) system were investigated.

Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

The energy storage properties of Pb0.92La0.08Zr0.

Sensing behavior of atomically thin-layered MoS2 transistors.

Most of recent research on layered chalcogenides is understandably focused on single atomic layers. However, it is unclear if single-layer units are the most ideal structures for enhanced gas-solid interactions. To probe this issue further, we have prepared large-area MoS2 sheets ranging from single to multiple layers on 300 nm SiO2/Si substrates using the micromechanical exfoliation method.