We report the effects of the nitride passivation layer on the structural, electrical, and interfacial properties of Ge metal-oxide-semiconductor (MOS) devices with a hafnium oxide (HfO₂) gate dielectric layer deposited on -type 〈100〉 Ge substrates. X-ray photoelectron spectroscopy analysis confirmed the chemical states and formation of HfO₂/Ge₃N₄ on Ge. The interfacial quality and thickness of the layers grown on Ge were confirmed by high-resolution transmission electron microscopy.
View Article and Find Full Text PDFBackground And Objectives: Epinephrine is volatile and unstable on exposure to air. Addition of sodium metabisulfite as an antioxidant has been effective, but there are no clear-cut consensus on its efficiency in retarding the oxidation that sets in once the anesthetic vials are kept open with a needle . There is a paucity of scientific data regarding the risks of reuse of anesthetic vials following the use of cartridges, a common practice in western countries.
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