Voltage control of magnetism in FeGeTe/InSe van der Waals ferromagnetic/ferroelectric heterostructures.

We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic FeGeTe and the ferroelectric InSe. It is observed that gate voltages applied to the FeGeTe/InSe heterostructure device modulate the magnetic properties of FeGeTe with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane InSe and FeGeTe lattice constants for both voltage polarities.