The effects of radio frequency plasma power on Ai2O3 films deposited at room-temperature by remote plasma atomic layer deposition.

Al2O3 films were deposited by a remote plasma atomic layer deposition (RPALD) method at room temperature (25 degrees C) in a reactor using alternating exposures of Al(CH3)3 and O2 plasma. Oxygen plasma was used as a reactant gas to decompose the trimethylaluminum [TMA, Al(CH3)3] precursor at room temperature. The RF plasma power was increased to produce enough radicals for the deposition of the Al2O3 films at room temperature.