Stretchable photosensors with InN nanowires operating at a wavelength of 1.3 μm.

Stretchable photosensors, which operate in the wavelength window of 1.3 μm, were fabricated with InN nanowires (NWs) and graphene to serve as a light-absorbing medium and carrier channel, respectively. Specifically, the stretchable photosensors were fabricated by transferring InN NWs embedded in graphene layers onto polyurethane substrates pre-stretched at the strain levels of 10, 20, 30, 40, 50, and 60%.

Improvement in Photoelectrochemical Water Splitting Performance of GaN-nanowire Photoanode Using MXene.

The photoelectrochemical water splitting (PEC-WS) performance of a photoanode consisting of GaN nanowires (NWs) is significantly improved using a TiC-MXene coating as an intermediate layer to promote carrier transfer toward the electrolyte. The maximum current density and applied-bias photon-to-current efficiency of the photoanode comprising GaN NWs coated with TiC-MXene (MGNWs) are measured to be 34.24 mA/cm and 14.

Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires.

We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires (HSNWs) as a photocathode (PC) material. The InGaN/GaN HSNWs were formed by first growing GaN nanowires (NWs) on an Si substrate and then forming InGaN NWs thereon. The InGaN/GaN HSNWs can cause the accumulation of photo-generated carriers in InGaN due to the potential barrier formed at the hetero-interface between InGaN and GaN, to increase directional migration towards electrolyte rather than the Si substrate, and consequently to contribute more to the PEC-WS reaction with electrolyte.

Flexible 1.3 μm photodetector fabricated with InN nanowires and graphene on overhead projector transparency sheet.

We report the first demonstration of flexible photodetectors, operating at the wavelength window of 1.3 μm, fabricated with InN nanowires (NWs) and graphene on an overhead projector transparency (OHP) sheet. The InN NWs, used as an absorption medium for the device, were formed on a Si substrate and exhibited strong emission with a peak wavelength of 1.

Room-temperature operation of light-assisted NOgas sensor based on GaN nanowires and graphene.

We report the successful demonstration of a light-assisted NOgas sensor that operates at room temperature with high response. The gas sensor was fabricated with high-crystalline undoped-GaN nanowires (NWs) and graphene functioning as the light-absorbing medium and carrier channel, respectively. Exposure of the gas sensor to the NOconcentration of 100 ppm at a light intensity of 1 mW cmof a xenon lamp delivered a response of 16% at room temperature, which increased to 23% when the light intensity increased to 100 mW cm.