In Vitro Modeling of Atherosclerosis Using iPSC-Derived Blood Vessel Organoids.

As modeling of atherosclerosis requires recapitulating complex interactions with vasculature and immune cells, previous in vitro models have limitations due to their insufficient 3D vascular structures. However, induced pluripotent stem cell-derived blood vessel organoids (BVOs) are applicable for modeling vascular diseases, containing multiple cell types, including endothelial and vascular smooth muscle cells self-assembled into a blood vessel structure. Atherosclerotic BVOs with a microenvironment associated with atherogenesis, such as shear stress, low-density lipoprotein, pro-inflammatory cytokine, and monocyte co-culture are successfully developed.

Bioengineered liver crosslinked with nano-graphene oxide enables efficient liver regeneration via MMP suppression and immunomodulation.

Decellularized extracellular matrix scaffold, widely utilized for organ engineering, often undergoes matrix decomposition after transplantation and produces byproducts that cause inflammation, leading to clinical failure. Here we propose a strategy using nano-graphene oxide to modify the biophysical properties of decellularized liver scaffolds. Notably, we demonstrate that scaffolds crosslinked with nano-graphene oxide show high resistance to enzymatic degradation via direct inhibition of matrix metalloproteinase activity and increased mechanical rigidity.

Application of nano-graphene oxide as nontoxic disinfectant against alpha and betacoronaviruses.

New viruses are continuously emerging and recently there have been many great concerns on severe acute respiratory syndrome coronavirus (SARS-CoV-2). Nanographene oxide (nanoGO) has received much attention and is widely investigated to be utilised in therapy for infectious diseases by viruses. Thus, antiviral activity of nanoGO was evaluated using the porcine epidemic diarrhoea virus (PEDV), bovine coronavirus (BCoV), and SARS-CoV-2, which are all Alpha- and Beta-coronavirus.

Sheet Resistance Analysis of Interface-Engineered Multilayer Graphene: Mobility Versus Sheet Carrier Concentration.

Both interlayer-undoped and interlayer-doped multilayer graphenes were prepared by the multiple transfers of graphene layers with multiple Cu etching (either dopant-free or doped during etching) and transfer, and the effect of interface properties on the electrical properties of multilayer graphene was investigated by varying the number of layers from 1 to 12. In both the cases, the sheet resistance decreased with increasing number of layers from 700 to 104 Ω/sq for the interlayer-undoped graphene and from 280 to 25 Ω/sq for the interlayer-doped graphene. Further, Hall measurements revealed that the origins of the sheet resistance reduction in the two cases are different.

Ultraclean patterned transfer of single-layer graphene by recyclable pressure sensitive adhesive films.

We report an ultraclean, cost-effective, and easily scalable method of transferring and patterning large-area graphene using pressure sensitive adhesive films (PSAFs) at room temperature. This simple transfer is enabled by the difference in wettability and adhesion energy of graphene with respect to PSAF and a target substrate. The PSAF-transferred graphene is found to be free from residues and shows excellent charge carrier mobility as high as ∼17,700 cm(2)/V·s with less doping compared to the graphene transferred by thermal release tape (TRT) or poly(methyl methacrylate) (PMMA) as well as good uniformity over large areas.

Graphene-induced unusual microstructural evolution in Ag plated Cu foils.

Graphene-induced abnormal grain growth of Cu with a grain size of more than 1 mm(2) was observed on Cu-Ag alloy foil, and this phenomenon occurred only with graphene synthesis and only on the Cu-Ag alloy among various types of Cu foils.

Synthesis of CVD-graphene on rapidly heated copper foils.

Most chemical vapor deposition (CVD) systems used for graphene growth mainly employ convection and radiation heat transfer between the heating source and the metal catalyst in order to reach the activation temperature of the reaction, which in general leads to a long synthesis time and poor energy efficiency. Here, we report a highly time- and energy-efficient CVD setup, in which the metal catalyst (Cu) is designed to be physically contacted with a heating source to give quick heat transfer by conduction. The induced conduction heating enabled the usual effects of the pretreatment and annealing of Cu (i.

Highly uniform growth of monolayer graphene by chemical vapor deposition on Cu-Ag alloy catalysts.

One of the major challenges for the practical application of graphene is the large scale synthesis of uniform films with high quality at lower temperature. Here, we demonstrate the use of Ag-plated Cu substrates in the synthesis of high-quality graphene films via chemical vapor deposition (CVD) of methane gas at temperatures as low as 900 °C. Various experimental analyses show that the plated Ag diffuses into Cu to form a uniform Cu-Ag alloy that suppresses the formation of multilayer nucleation and decreases the activation energy of precursor formation, leading to a lower synthesis temperature with enhanced monolayer coverage.

Fast synthesis of high-performance graphene films by hydrogen-free rapid thermal chemical vapor deposition.

The practical use of graphene in consumer electronics has not been demonstrated since the size, uniformity, and reliability problems are yet to be solved to satisfy industrial standards. Here we report mass-produced graphene films synthesized by hydrogen-free rapid thermal chemical vapor deposition (RT-CVD), roll-to-roll etching, and transfer methods, which enabled faster and larger production of homogeneous graphene films over 400 × 300 mm(2) area with a sheet resistance of 249 ± 17 Ω/sq without additional doping. The properties of RT-CVD graphene have been carefully characterized by high-resolution transmission electron microscopy, Raman spectroscopy, chemical grain boundary analysis, and various electrical device measurements, showing excellent uniformity and stability.

Vapor-phase molecular doping of graphene for high-performance transparent electrodes.

Doping is an essential process to engineer the conductivity and work-function of graphene for higher performance optoelectronic devices, which includes substitutional atomic doping by reactive gases, electrical/electrochemical doping by gate bias, and chemical doping by acids or reducing/oxidizing agents. Among these, the chemical doping has been widely used due to its simple process and high doping strength. However, it also has an instability problem in that the molecular dopants tend to gradually evaporate from the surface of graphene, leading to substantial decrease in doping effect with time.

Efficient transfer of large-area graphene films onto rigid substrates by hot pressing.

Graphene films grown on metal substrates by chemical vapor deposition (CVD) method have to be safely transferred onto desired substrates for further applications. Recently, a roll-to-roll (R2R) method has been developed for large-area transfer, which is particularly efficient for flexible target substrates. However, in the case of rigid substrates such as glass or wafers, the roll-based method is found to induce considerable mechanical damages on graphene films during the transfer process, resulting in the degradation of electrical property.