Mechanically stretchable strain sensors gain tremendous attention for bioinspired skin sensation systems and artificially intelligent tactile sensors. However, high-accuracy detection of both strain intensity and direction with simple device/array structures is still insufficient. To overcome this limitation, an omnidirectional strain perception platform utilizing a stretchable strain sensor array with triangular-sensor-assembly (three sensors tilted by 45°) coupled with machine learning (ML) -based neural network classification algorithm, is proposed.
View Article and Find Full Text PDFHigh linearity/sensitivity and a wide dynamic sensing range are the most desirable features for pressure sensors to accurately detect and respond to external pressure stimuli. Even though a number of recent studies have demonstrated a low-cost pressure sensing device for a smart insole system by using scalable and deformable conductive materials, they still lack stretchability and desirable properties such as high sensitivity, hysteresis, linearity, and fast response time to obtain accurate and reliable data. To resolve this issue, a flexible and stretchable piezoresistive pressure sensor with high linear response over a wide pressure range is developed and integrated in a wearable insole system.
View Article and Find Full Text PDFSemiconducting single-walled carbon nanotubes (s-SWCNTs) have gathered significant interest in various emerging electronics due to their outstanding electrical and mechanical properties. Although large-area and low-cost fabrication of s-SWCNT field effect transistors (FETs) can be easily achieved via solution processing, the electrical performance of the solution-based s-SWCNT FETs is often limited by the charge transport in the s-SWCNT networks and interface between the s-SWCNT and the dielectrics depending on both s-SWCNT solution synthesis and device architecture. Here, we investigate the surface and interfacial electro-chemical behaviors of s-SWCNTs.
View Article and Find Full Text PDFTextile-based pressure sensors have garnered considerable interest in electronic textiles due to their diverse applications, including human-machine interface and healthcare monitoring systems. We studied a textile-based capacitive pressure sensor array using a poly(vinylidene fluoride)-co-hexafluoropropylene (PVDF-HFP)/ionic liquid (IL) composite film. By constructing a capacitor structure with Ag-plated conductive fiber electrodes that are embedded in fabrics, a capacitive pressure sensor showing high sensitivity, good operation stability, and a wide sensing range could be created.
View Article and Find Full Text PDFLow-temperature solution-processed oxide semiconductor and dielectric films typically possess a substantial number of defects and impurities due to incomplete metal-oxygen bond formation, causing poor electrical performance and stability. Here, we exploit a facile route to improve the film quality and the interfacial property of low-temperature solution-processed oxide thin films via elemental diffusion between metallic ion-doped InO (M:InO) ternary oxide semiconductor and AlO gate dielectric layers. Particularly, it was revealed that metallic dopants such as magnesium (Mg) and hafnium (Hf) having a small ionic radius, a high Gibbs energy of oxidation, and bonding dissociation energy could successfully diffuse into the low-quality AlO gate dielectric layer and effectively reduce the structural defects and residual impurities present in the bulk and at the semiconductor/dielectric interface.
View Article and Find Full Text PDFOptoelectronic applications using perovskites have emerged as one of the most promising platforms such as phototransistors, photovoltaics, and photodetectors. However, high-performance and reliable perovskite photonic devices are often hindered by the limited spectral ranges of the perovskite system along with the lack of appropriate processing technologies for the implementation of reliable device architectures. Here, we explore a hybrid phototransistor with a heterojunction of a Sn-Pb binary mixed halide perovskite (CsSnPbIBr) light absorber and an amorphous-In-Ga-Zn-O (a-IGZO) charge carrying layer.
View Article and Find Full Text PDFAmong various wearable health-monitoring electronics, electronic textiles (e-textiles) have been considered as an appropriate alternative for a convenient self-diagnosis approach. However, for the realization of the wearable e-textiles capable of detecting subtle human physiological signals, the low-sensing performances still remain as a challenge. In this study, a fiber transistor-type ultra-sensitive pressure sensor (FTPS) with a new architecture that is thread-like suspended dry-spun carbon nanotube (CNT) fiber source (S)/drain (D) electrodes is proposed as the first proof of concept for the detection of very low-pressure stimuli.
View Article and Find Full Text PDFFor wearable health monitoring systems and soft robotics, stretchable/flexible pressure sensors have continuously drawn attention owing to a wide range of potential applications such as the detection of human physiological and activity signals, and electronic skin (e-skin). Here, we demonstrated a highly stretchable pressure sensor using silver nanowires (AgNWs) and photo-patternable polyurethane acrylate (PUA). In particular, the characteristics of the pressure sensors could be moderately controlled through a micro-patterned hole structure in the PUA spacer and size-designs of the patterned hole area.
View Article and Find Full Text PDFQuantum confinements, especially quantum in narrow wells, have been investigated because of their controllability over electrical parameters. For example, quantum dots can emit a variety of photon wavelengths even for the same material depending on their particle size. More recently, the research into two-dimensional (2D) materials has shown the availability of several quantum mechanical phenomenon confined within a sheet of materials.
View Article and Find Full Text PDFTo demonstrate the wearable flexible/stretchable health-monitoring sensor, it is necessary to develop advanced functional materials and fabrication technologies. Among the various developed materials and fabrication processes for wearable sensors, carbon-based materials and textile-based configurations are considered as promising approaches due to their outstanding characteristics such as high conductivity, lightweight, high mechanical properties, wearability, and biocompatibility. Despite these advantages, in order to realize practical wearable applications, electrical and mechanical performances such as sensitivity, stability, and long-term use are still not satisfied.
View Article and Find Full Text PDFAs an alternative strategy for conventional high-temperature crystallization of metal oxide (MO) channel layers, the catalytic metal-accelerated crystallization (CMAC) process using a metal seed layer is demonstrated for low-temperature crystallization of solution-processed MO semiconductors. In the CMAC process, the catalytic metal layer plays the role of seed sites for initiating and accelerating the crystallization of amorphous MO films. Generally, the solution-processed crystalline-TiO (c-TiO) films required high-temperature crystallization conditions (≥500-600 °C), showing low electrical performance with a high defect density.
View Article and Find Full Text PDFMimicking human skin sensation such as spontaneous multimodal perception and identification/discrimination of intermixed stimuli is severely hindered by the difficulty of efficient integration of complex cutaneous receptor-emulating circuitry and the lack of an appropriate protocol to discern the intermixed signals. Here, a highly stretchable cross-reactive sensor matrix is demonstrated, which can detect, classify, and discriminate various intermixed tactile and thermal stimuli using a machine-learning approach. Particularly, the multimodal perception ability is achieved by utilizing a learning algorithm based on the bag-of-words (BoW) model, where, by learning and recognizing the stimulus-dependent 2D output image patterns, the discrimination of each stimulus in various multimodal stimuli environments is possible.
View Article and Find Full Text PDFQuantum dot (QD)-based optoelectronics have received great interest for versatile applications because of their excellent photosensitivity, facile solution processability, and the wide range of band gap tunability. In addition, QD-based hybrid devices, which are combined with various high-mobility semiconductors, have been actively researched to enhance the optoelectronic characteristics and maximize the zero-dimensional structural advantages, such as tunable band gap and high light absorption. However, the difficulty of highly efficient charge transfer between QDs and the semiconductors and the lack of systematic analysis for the interfaces have impeded the fidelity of this platform, resulting in complex device architectures and unsatisfactory device performance.
View Article and Find Full Text PDFFor the fabrication of next-generation flexible metal oxide devices, solution-based methods are considered as a promising approach because of their potential advantages, such as high-throughput, large-area scalability, low-cost processing, and easy control over the chemical composition. However, to obtain certain levels of electrical performance, a high process temperature is essential, which can significantly limit its application in flexible electronics. Therefore, this article discusses recent research conducted on developing low-temperature, solution-processed, flexible, metal oxide semiconductor devices, from a single thin-film transistor device to fully integrated circuits and systems.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2019
The fabrication of high-performance metal oxide thin-film transistors (TFTs) using a low-temperature solution process may facilitate the realization of ultraflexible and wearable electronic devices. However, the development of highly stable oxide gate dielectrics at a low temperature has been a challenging issue since a considerable amount of residual impurities and defective bonding states is present in low-temperature-processed gate dielectrics causing a large counterclockwise hysteresis and a significant instability. Here, we report a new approach to effectively remove the residual impurities and suppress the relevant dipole disorder in a low-temperature-processed (180 °C) AlO gate dielectric layer by magnesium (Mg) doping.
View Article and Find Full Text PDFEmulating the biological visual perception system typically requires a complex architecture including the integration of an artificial retina and optic nerves with various synaptic behaviors. However, self-adaptive synaptic behaviors, which are frequently translated into visual nerves to adjust environmental light intensities, have been one of the serious challenges for the artificial visual perception system. Here, an artificial optoelectronic neuromorphic device array to emulate the light-adaptable synaptic functions (photopic and scotopic adaptation) of the biological visual perception system is presented.
View Article and Find Full Text PDFDeep ultraviolet (DUV)-treatment is an efficient method for the removal of high-energy-barrier polymeric or aliphatic organic ligands from nanomaterials. Regardless of morphology and material, the treatment can be used for nanoparticles, nanowires, and even nanosheets. The high-energy photon irradiation from low-pressure mercury lamps or radio frequency (RF) discharge excimer lamps could enhance the electrical conductivity of various nanomaterial matrixes, such as Ag nanoparticles, BiSe nanosheets, and Ag nanowires, with the aliphatic alkyl chained ligand (oleylamine; OAm) and polymeric ligand (polyvinyl pyrrolidone; PVP) as surfactants.
View Article and Find Full Text PDFA fiber-based single-walled carbon nanotube (SWCNT) thin-film-transistor (TFT) has been proposed. We designed complementary SWCNT TFT circuit based on SPICE simulations, with device parameters extracted from the fabricated fiber-based SWCNT TFTs, such as threshold voltage, contact resistance, and off-/gate-leakage current. We fabricated the SWCNTs CMOS inverter circuits using the selective passivation and n-doping processes on a fiber substrate.
View Article and Find Full Text PDFWearable electronics are emerging as a platform for next-generation, human-friendly, electronic devices. A new class of devices with various functionality and amenability for the human body is essential. These new conceptual devices are likely to be a set of various functional devices such as displays, sensors, batteries, etc.
View Article and Find Full Text PDFOxide dielectric materials play a key role in a wide range of high-performance solid-state electronics from semiconductor devices to emerging wearable and soft bioelectronic devices. Although several previous advances are noteworthy, their typical processing temperature still far exceeds the thermal limitations of soft materials, impeding their wide utilization in these emerging fields. Here, we report an innovative route to form highly reliable aluminum oxide dielectric films using an ultralow-temperature (<60 °C) solution process with a class of oxide nanocluster precursors.
View Article and Find Full Text PDFIn this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlO) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz).
View Article and Find Full Text PDFThe realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors.
View Article and Find Full Text PDFEmulation of diverse electronic devices on textile platform is considered as a promising approach for implementing wearable smart electronics. Of particular, the development of multifunctional polymeric fibers and their integration in common fabrics have been extensively researched for human friendly wearable platforms. Here we report a successful emulation of multifunctional body-motion sensors and user-interface (UI) devices in textile platform by using in situ polymerized poly(3,4-ethylenedioxythiophene) (PEDOT)-coated fibers.
View Article and Find Full Text PDFThe low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films.
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