Efficient 0.75-mJ 100-kHz ultraviolet pulsed laser based on a rod-type photonic crystal fiber.

We have developed a high-power ultraviolet (UV) nanosecond-pulsed laser based on a rod-type photonic crystal fiber. The UV pulse energy and the pulse repetition rate are 0.75 mJ and 100 kHz, respectively, yielding 75-W UV average power.

Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD.

In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.

Electron beam irradiated silver nanowires for a highly transparent heater.

Transparent heaters have attracted increasing attention for their usefulness in vehicle windows, outdoor displays, and periscopes. We present high performance transparent heaters based on Ag nanowires with electron beam irradiation. We obtained an Ag-nanowire thin film with 48 ohm/sq of sheet resistance and 88.

Index-matched indium tin oxide electrodes for capacitive touch screen panel applications.

Index-matched indium tin oxide (ITO) electrodes for capacitive touch screen panels have been fabricated to improve optical transmittance and reduce the difference of reflectance (deltaR) between the etched and un-etched regions. 8.5 nm Nb2O5 and 49 nm SiO2 thin films were deposited by magnetron sputtering as index-matching layers between an ITO electrode and a glass substrate.

Thin film transistor based on TiOx prepared by DC magnetron sputtering.

This paper reports on the thin film transistor (TFT) based on TiOx prepared by direct current (DC) magnetron sputtering for the application of n-type channel transparent TFTs. A ceramic TiOx target was prepared for the sputtering of the TiO2 films. The structural, optical, and electrical properties of the TiO2 films were investigated after their heat treatment.

Current stress induced electrical instability in transparent zinc tin oxide thin-film transistors.

Transparent zinc tin oxide thin-film transistors (ZTO-TFTs) [Zn:Sn = 4:1-2:1] have been fabricated so as to estimate the electrical instability under constant current stress. The relative intensity of the drain current noise power spectra density has been shown to have a typical 1/f-noise character, and it is implied that the mobility fluctuation in ZTO-TFT [Zn:Sn = 4:1] can be enhanced by a short-range ordering in amorphous Zn-Sn-oxide, causing a larger shift of the threshold voltage (deltaV(th)).

Structural and optical properties of Cu doped ZnO thin films by co-sputtering.

This paper reports on the structural and optical properties of ZnCuO thin films that were prepared by co-sputtering for the application of p-type-channel transparent thin-film transistors (TFTs). Pure ceramic ZnO and metal Cu targets were prepared for the co-sputtering of the ZnCuO thin films. The effects of the Cu concentration on the structural, optical, and electrical properties of the ZnCuO films were investigated after their heat treatment.

Prediction of the limit of detection of an optical resonant reflection biosensor.

A prediction of the limit of detection of an optical resonant reflection biosensor is presented. An optical resonant reflection biosensor using a guided-mode resonance filter is one of the most promising label-free optical immunosensors due to a sharp reflectance peak and a high sensitivity to the changes of optical path length. We have simulated this type of biosensor using rigorous coupled wave theory to calculate the limit of detection of the thickness of the target protein layer.