ACS Appl Mater Interfaces
December 2023
Elastomeric dielectrics are crucial for reliably governing the carrier densities in semiconducting channels during deformation in soft/stretchable field-effect transistors (FETs). Uncontrolled stacking of polymeric chains renders elastomeric dielectrics poorly insulated at nanoscale thicknesses, thereby thick films are usually required, leading to high voltage or power consumption for on/off operations of FETs. Here, layer-by-layer assembly is exploited to build 15-nm-thick elastomeric nanodielectrics through alternative adsorption of oppositely charged polyurethanes (PUs) for soft and hysteresis-free FETs.
View Article and Find Full Text PDFWith the advent of the era of consumer-oriented displays and mobile devices, the importance of barrier film coatings for securing devices from oxygen or moisture penetration has become more salient. Recently developed approaches to generate gas barrier films in a combination of polyelectrolyte multilayer matrices and incorporated inorganic nanosheets have shown great potential in outperforming conventional gas barrier films. However, these films have the intrinsic drawback of vulnerability to brittleness and inability to stretch for flexible device applications.
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