Investigation of the dielectric function of solution-processed InGaZnO films using ellipsometry.

The optical properties of InGaZnO (IGZO) films grown through the sol-gel process as a function of sintering time were investigated with spectroscopic ellipsometry (SE). The IGZO precursor sol was prepared by mixing In nitrate, Ga nitrate, and Zn acetate at a molar ratio of In:Ga:Zn = 3:1:1. The solution was deposited on a SiO2/Si substrate via spin coating.

Investigation of the crystallization of amorphous Si by imaging ellipsometry.

We report results on a study of the formation of polycrystalline Si by thermally annealing amorphous Si films. The crystallization of amorphous Si is of increasing interest not only from a basic-physics point of view but also for its wide application in the semiconductor device area. The amorphous Si was deposited on a glass substrate coated with buffer layers and a small amount of Ni to stimulate crystallization.

Optical study of Mn-doped Bi4Ti3O,12 thin films by spectroscopic ellipsometry.

Mn-doped Bi4Ti3O12(B4T3) thin films grown at 400 degrees C on a Pt/Ti/SiO2/Si substrate through pulsed laser deposition (PLD) were analyzed via spectroscopic ellipsometry (SE). The PLD targets were produced through the conventional solid-state sintering method, and the film samples were annealed at 600 degrees C. The SE spectra of B4T3 films were measured using a rotating analyzer type ellipsometer within the 1.