Demonstration of Steep Switching Behavior Based on Band Modulation in WSe Feedback Field-Effect Transistor.

Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~10. However, their structural complexity, such as an epitaxy process after an etch process for a Si channel with a thickness of several nanometers, has limited broader research. We demonstrated a FBFET using in-plane WSe p-n homojunction.

Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors.

Recently, tellurium (Te) has been proposed as a promising p-type material; however, even the state-of-the-art results couldn't overcome the critical roadblocks for its practical applications, such as large - hysteresis and high off-state leakage current. We developed a novel Te atomic layer deposition (ALD) process combined with a TeO seed layer and AlO passivation to detour the limitations of p-type Te semiconducting materials. Also, we have identified the origins of high hysteresis and off current using the 77 K operation study and passivation process optimization.