Fostering Charge Carrier Transport and Absorber Growth Properties in CZTSSe Thin Films with an ALD-SnO Capping Layer.

The present study demonstrates that precursor passivation is an effective approach for improving the crystallization process and controlling the detrimental defect density in high-efficiency CuZnSn(S,Se) (CZTSSe) thin films. It is achieved by applying the atomic layer deposition (ALD) of the tin oxide (ALD-SnO) capping layer onto the precursor (Cu-Zn-Sn) thin films. The ALD-SnO capping layer was observed to facilitate the homogeneous growth of crystalline grains and mitigate defects prior to sulfo-selenization in CZTSSe thin films.

Improving the Device Performance of CZTSSe Thin-Film Solar Cells via Indium Doping.

Cation incorporation emerges as a promising approach for improving the performance of the kesterite CuZnSn(S,Se) (CZTSSe) device. Herein, we report indium (In) doping using the chemical bath deposition (CBD) technique to enhance the optoelectronic properties of CZTSSe thin-film solar cells (TFSCs). To incorporate a small amount of the In element into the CZTSSe absorber thin films, an ultrathin (<10 nm) layer of InS is deposited on soft-annealed precursor (Zn-Sn-Cu) thin films prior to the sulfo-selenization process.

Atom-Scale Chemistry in Chalcopyrite-Based Photovoltaic Materials Visualized by Atom Probe Tomography.

Chalcopyrite-based materials for photovoltaic devices tend to exhibit complex structural imperfections originating from their polycrystalline nature; nevertheless, properly controlled devices are surprisingly irrelevant to them in terms of resulting device performances. The present work uses atom probe tomography to characterize co-evaporated high-quality Cu(In,Ga)Se (CIGS) films on flexible polyimide substrates either with or without doping with Na or doping with Na followed by K via a post-deposition treatment. The intent is to elucidate the unique characteristics of the grain boundaries (GBs) in CIGS, in particular the correlations/anti-correlations between matrix elements and the alkali dopants.

Tailored Band Structure of Cu(In,Ga)Se Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function.

An efficient carrier transport is essential for enhancing the performance of thin-film solar cells, in particular Cu(In,Ga)Se (CIGS) solar cells, because of their great sensitivities to not only the interface but also the film bulk. Conventional methods to investigate the outcoming carriers and their transport properties measure the current and voltage either under illumination or dark conditions. However, the evaluation of current and voltage changes along the cross-section of the devices presents several limitations.

Practical Enhancements in Current Density and Power Generation of Bifacial Semitransparent Ultrathin CIGSe Solar Cells via Utilization of Wide Bandgap Zn-Based Buffer.

Among many building-integrated semitransparent photovoltaics (BISTPVs), semitransparent ultrathin (STUT) Cu(In ,Ga )Se (CIGSe) solar cells are distinguishable due to their potential high power conversion efficiency (PCE) among other thin-film solar cells, versatile applicability based on thin film deposition processes, high stability consisting of all inorganic compositions, and practical expandability to bifacial applications. However, the fundamental trade-off relationship between PCE and transparency limits the performance of BISTPV because implementing a higher semitransparency lowers the optical budget of incoming light. To expand the available optical budget and to enhance the PCE while maintaining a suitable transparency in STUT CIGSe solar cell with single-stage coevaporated 500-nm-thick absorber, an atomic layer deposited wide bandgap Zn(O,S) buffer is introduced as the replacement of conventional CdS buffer, which partially limits incoming light less than 520 nm in wavelength.

Optimal CdS Buffer Thickness to Form High-Quality CdS/Cu(In,Ga)Se Junctions in Solar Cells without Plasma Damage and Shunt Paths.

CdS has been known to be one of the best junction partners for Cu(In,Ga)Se (CIGS) in CIGS solar cells. However, the use of thick CdS buffer decreases the short-circuit current density of CIGS solar cells. There are two obstacles that limit the use of ultrathin CdS.

Passivation of Deep-Level Defects by Cesium Fluoride Post-Deposition Treatment for Improved Device Performance of Cu(In,Ga)Se Solar Cells.

Heavy-alkali post-deposition treatments (PDTs) utilizing Cs or Rb has become an indispensable step in producing high-performance Cu(In,Ga)Se (CIGS) solar cells. However, full understanding of the mechanism behind the improvements of device performance by heavy-alkali treatments, particularly in terms of potential modification of defect characteristics, has not been reached yet. Here, we present an extensive study on the effects of CsF-PDT on material properties of CIGS absorbers and the performance of the final solar devices.

Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se2 Thin-film Solar Cells.

Silver nanowire transparent electrodes have been employed as window layers for Cu(In,Ga)Se2 thin-film solar cells. Bare silver nanowire electrodes normally result in very poor cell performance. Embedding or sandwiching silver nanowires using moderately conductive transparent materials, such as indium tin oxide or zinc oxide, can improve cell performance.

Performance and Uniformity Improvement in Ultrathin Cu(In,Ga)Se Solar Cells with a WO Nanointerlayer at the Absorber/Transparent Back-Contact Interface.

Thinning CIGSe absorber layer to less than 500 nm is desirable for reducing the cost per unit watt of photovoltaic-generated electricity, and also, the semitransparent solar cell based on such a thin absorber can be used in bifacial and superstrate configurations if the back electrode is transparent. In this study, a WO layer is inserted between Cu(In,Ga)Se (CIGSe) absorber and tin-doped indium oxide back-contact to enhance the hole collection at the back electrode. A WO interlayer with a thickness of 6 nm is found to be optimum because it causes a ∼38% relative increase in the fill factor of a ∼450 nm thick CIGSe-based device compared to the reference device without a WO interlayer.

Band Tail Engineering in Kesterite CuZnSn(S,Se) Thin-Film Solar Cells with 11.8% Efficiency.

Herein, we report a facile process, i.e., controlling the initial chamber pressure during the postdeposition annealing, to effectively lower the band tail states in the synthesized CZTSSe thin films.

Aqueous-Solution-Processed CuZnSn(S,Se) Thin-Film Solar Cells via an Improved Successive Ion-Layer-Adsorption-Reaction Sequence.

A facile improved successive ionic-layer adsorption and reaction (SILAR) sequence is described for the fabrication of CuZnSn(S,Se) (CZTSSe) thin-film solar cells (TFSCs) via the selenization of a precursor film. The precursor films were fabricated using a modified SILAR sequence to overcome compositional inhomogeneity due to different adsorptivities of the cations (Cu, Sn, and Zn) in a single cationic bath. Rapid thermal annealing of the precursor films under S and Se vapor atmospheres led to the formation of carbon-free CuZnSnS (CZTS) and CZTSSe absorber layers, respectively, with single large-grained layers.

Silver Nanowires Binding with Sputtered ZnO to Fabricate Highly Conductive and Thermally Stable Transparent Electrode for Solar Cell Applications.

Silver nanowire (AgNW) film has been demonstrated as excellent and low cost transparent electrode in organic solar cells as an alternative to replace scarce and expensive indium tin oxide (ITO). However, the low contact area and weak adhesion with low-lying surface as well as junction resistance between nanowires have limited the applications of AgNW film to thin film solar cells. To resolve this problem, we fabricated AgNW film as transparent conductive electrode (TCE) by binding with a thin layer of sputtered ZnO (40 nm) which not only increased contact area with low-lying surface in thin film solar cell but also improved conductivity by connecting AgNWs at the junction.

Carbon-Impurity Affected Depth Elemental Distribution in Solution-Processed Inorganic Thin Films for Solar Cell Application.

A common feature of the inorganic thin films including Cu(In,Ga)(S,Se)2 fabricated by nonvacuum solution-based approaches is the doubled-layered structure, with a top dense inorganic film and a bottom carbon-containing residual layer. Although the latter has been considered to be the main efficiency limiting factor, (as a source of high series resistance), the exact influence of this layer is still not clear, and contradictory views are present. In this study, using a CISe as a model system, we report experimental evidence indicating that the carbon residual layer itself is electrically benign to the device performance.

Wurtzite CZTS nanocrystals and phase evolution to kesterite thin film for solar energy harvesting.

A quaternary indium- and gallium-free kesterite (KS)-based compound, copper zinc tin sulfide (Cu2ZnSnS4, CZTS), has received significant attention for its potential applications in low cost and sustainable solar cells. It is well known that the reaction time, reactivity of the precursors, and types of capping ligands used during the synthesis of colloidal nanocrystals (NCs) strongly influence the crystallographic phase of the NCs. In this research, a non-toxic and green synthetic strategy for both the synthesis of CZTS NCs and the fabrication of a highly efficient CZTS absorber layers using an ink formulation without a toxic solvent, which meets the comprehensive framework for green chemistry that covers major aspects of the environmental strain, is demonstrated.

Carbon- and oxygen-free Cu(InGa)(SSe)₂ solar cell with a 4.63% conversion efficiency by electrostatic spray deposition.

We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)2 (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 °C for annealing and 500 °C for both sulfurization and selenization, with a ramp rate of 5 °C/min.

Amorphous Cu-In-S nanoparticles as precursors for CuInSe2 thin-film solar cells with a high efficiency.

CuInSe2 (CISe) absorber layers for thin-film solar cells were fabricated through the selenization of amorphous Cu-In-S nanoparticles, which were prepared by using a low-temperature colloidal process within one minute without any external heating. Two strategies for obtaining highly dense CISe absorber films were used in this work; the first was the modification of nanoparticle surface through chelate complexation with ethanolamine, and the second strategy utilized the lattice expansion that occurred when S atoms in the precursor particles were replaced with Se during selenization. The synergy of these two strategies allowed formation of highly dense CISe thin films, and devices fabricated using the absorber layer demonstrated efficiencies of up to 7.

Cd-free CIGS solar cells with buffer layer based on the In2S3 derivatives.

This study guided by device evaluations was conducted to reveal the reasons for the loss of the photo-generated carriers in CIGS cells with the buffer based on In2S3 derivatives. Chemical bath deposited Inx(OOH,S)y films have been employed as a Cd-free buffer layers. When compared to solar cells with CdS buffer layer, the Cu0.

CuInSe₂ thin-film solar cells with 7.72 % efficiency prepared via direct coating of a metal salts/alcohol-based precursor solution.

A simple direct solution coating process for forming CuInSe₂ (CIS) thin films was described, employing a low-cost and environmentally friendly precursor solution. The precursor solution was prepared by mixing metal acetates, ethanol, and ethanolamine. The facile formation of a precursor solution without the need to prefabricate nanoparticles enables a rapid and easy processing, and the high stability of the solution in air further ensures the precursor preparation and the film deposition in ambient conditions without a glove box.

Microfabrication and optical properties of highly ordered silver nanostructures.

Using thermal evaporation, we fabricated five uniform and regular arrays of Ag nanostructures with different shapes that were based on an anodized aluminum oxide template and analyzed their optical properties. Round-top-shaped structures are obtained readily, whereas to obtain needle-on-round-top-shaped and needle-shaped structures, control of the directionality of evaporation, pore size, length, temperature of the substrate, etc., was required.

CuInSe2 (CIS) thin films prepared from amorphous Cu-In-Se nanoparticle precursors for solar cell application.

CuInSe(2) (CIS) absorber layers for thin film solar cells were formed via a nonvacuum route using nanoparticle precursors. A low-temperature colloidal process was used to prepare nanoparticles by which amorphous Cu-In-Se nanoparticles were formed within 1 min of reaction without any external heating. Raman spectra of the particles revealed that they were presumably mixtures of amorphous Cu-Se and In-Se binaries.