Bevel Structure Based XPS Analysis as a Non-Destructive Chemical Probe for Complex Interfacial Structures of Organic Semiconductors.

The bevel structure of organic multilayers produced by finely controlled Ar gas cluster ion beam sputtering preserves both the molecular distribution and chemical states. Nevertheless, there is still an important question of whether this method can be applicable to organic multilayer structures composed of complex or ambiguous interfaces used in real organic optoelectronic devices. Herein, various bevel structures are fabricated from different types of organic semiconductors using a solution-based deposition technique: complicatedly intermixed electron-donor and electron-acceptor bulk heterojunction structure, thin film structure with an internal donor-acceptor concentration gradient, and multi-layered structure with more than three layers.

In-Depth Investigation of the Correlation between Organic Semiconductor Orientation and Energy-Level Alignment Using In Situ Photoelectron Spectroscopy.

Organic semiconductors (OSCs) are of interest for replacing traditional Si-based semiconductors as their flexibility and transparency enable new applications. The properties of OSC materials greatly depend on their orientation and molecular arrangement, which are strongly dependent on the underlying substrate material. Hence, in this study, in situ ultraviolet photoelectron spectroscopy (UPS) is used to elucidate the effect of the substrate on OSC orientation.

Correction: Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering.

Correction for 'Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering' by Dong-Jin Yun et al., Phys. Chem.

Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering.

On the basis of an in situ photoemission spectroscopy (PES) system, we propose a novel, direct diagnosis method for the characterization of graphene (Gr) doping states at organic semiconductor (OSC)/electrode interfaces. Our in situ PES system enables ultraviolet/X-ray photoelectron spectroscopy (UPS/XPS) measurements during the OSC growth or removal process. We directly deposit C films on three different p-type dopants-gold chloride (AuCl), (trifluoromethyl-sulfonyl)imide (TFSI), and nitric acid (HNO).

Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors.

The band gap properties of amorphous SiInZnO (a-SIZO) thin-film transistors (TFTs) with different Si concentrations have been studied. The electronic structures of the films, engineered by controlling the Si content, have been investigated through the changes of the band gap and band edge states. Carrier generation at oxygen vacancies can modify the band gap states of oxide thin films.

Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature.

We report on the degradation process by water vapor of hydrogenated amorphous silicon oxynitride (SiON:H) films deposited by plasma-enhanced chemical vapor deposition at low temperature. The stability of the films was investigated as a function of the oxygen content and deposition temperature. Degradation by defects such as pinholes was not observed with transmission electron microscopy.

Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement.

Defect depth profiles of Cu (In1-x,Gax)(Se1-ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e.

Direct characterization of the energy level alignments and molecular components in an organic hetero-junction by integrated photoemission spectroscopy and reflection electron energy loss spectroscopy analysis.

A novel, direct method for the characterization of the energy level alignments at bulk-heterojunction (BHJ)/electrode interfaces on the basis of electronic spectroscopy measurements is proposed. The home-made in situ photoemission system is used to perform x-ray/ultraviolet photoemission spectroscopy (XPS/UPS), reflection electron energy loss spectroscopy (REELS) and inverse photoemission spectroscopy of organic-semiconductors (OSCs) deposited onto a Au substrate. Through this analysis system, we are able to obtain the electronic structures of a boron subphthalocyanine chloride:fullerene (SubPC:C60) BHJ and those of the separate OSC/electrode structures (SubPC/Au and C60/Au).

Study on the disparate transition behaviors of the electrical/physical properties in PEDOT:PSS film depending on solvent species under a follow-up solution-treatment process.

Unlabelled: In most solution-processed organic devices, a poly(3,4-ethylenedioxythiophene) (PEDOT) polymerized with poly(4-styrenesulfonate) (PSS) film is inevitably affected by various conditions during the subsequent solution-coating processes. To investigate the effects of direct solvent exposure on the properties of PEDOT polymerized with PSS (PEDOT:PSS) films, photoemission spectroscopy-based analytical methods were used before and after solvent-coating processes. Our results clearly indicate that

Pedot: PSS films undergo a different transition mechanism depending on the solubility of the solvent in water.

Direct analytical method of contact position effects on the energy-level alignments at organic semiconductor/electrode interfaces using photoemission spectroscopy combined with Ar gas cluster ion beam sputtering.

Unlabelled: Poly(3, 4-ethylenedioxythiophene) (PEDOT) polymerized with poly(4-styrenesulfonate) (PSS) is one of the most widely used conducting organic electrodes owing to its outstanding optical/electrical properties and high work function. Because its work function depends significantly on the molecular arrangements between PEDOT and PSS molecules on the surface, the contact position of

Pedot: PSS films on organic semiconductors (OSCs) must also be an essential consideration. However, existing analysis methods based on in situ deposition/analysis are limited in their ability to accurately investigate the electronic structures of the buried interface regions under the solution-processed electrode or OSC layer in organic devices.

Electron energy loss spectroscopy characterization of TANOS (TaN/Al₂O₃/Si₃N₄/SiO₂/Si) stacks.

The interfacial layer between the Al₂O₃ layer and the Si₃N₄ layer formed after postdeposition annealing (PDA) of TaN/Al₂O₃/Si₃N₄/SiO₂/Si (TANOS) stacks was investigated using transmission electron microscopy (TEM), scanning transmission electron microscopy, and electron energy loss spectroscopy (EELS). From the result of the TEM analysis, it was found that the 2-nm-thick interface layer between Al₂O₃ and Si₃N₄ layers was amorphous. The high-loss EELS analysis showed that the phases of the interfacial layer weakly bound together instead of the substoichiometric silicon oxide and amorphous Al₂O₃ near the bottom interface of the crystalline Al₂O₃.

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.

Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a "dream" display requires faster pixel switching and higher driving current, which in turn necessitate thin-film transistors (TFTs) with high mobility. Amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O are poised to enable such TFTs, but the trade-off between device performance and stability under illumination critically limits their usability, which is related to the hampered electron-hole recombination caused by the oxygen vacancies.

Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability.

A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZO stack that results in the best balance between device performance and stability.

Bandgap measurement of thin dielectric films using monochromated STEM-EELS.

High-resolution electron energy-loss spectroscopy (HR-EELS), achieved by attaching electron monochromators to transmission electron microscopes (TEM), has proved to be a powerful tool for measuring bandgaps. However, the method itself is still uncertain, due to Cerenkov loss and surface effects that can potentially influence the quality of EELS data. In the present study, we achieved an energy resolution of about 0.

A high-density array of size-controlled silicon nanodots in a silicon oxide nanowire by electron-stimulated oxygen expulsion.

Methods of producing Si nanodots embedded in films of silicon oxide and silicon nitride abound, but fabrication of Si nanodots in a nanowire of these materials is very rare despite the fact that nanowire architecture enhances the charge collection and transport efficiencies for solar cells and field-effect transistors. We report a novel fabrication method for a high-density array of size-controlled sillicon nanodots from a silicon oxide nanowire using electron-beam irradiation. Our results demonstrate that a highly dense phase of Si nanodots with a narrow size distribution can be made from a silicon oxide nanowire with a core-shell structure of crystalline silicon-rich oxide (c-SRO)/amorphous silicon oxide (a-SiO(2)).