Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds.

Near-band-gap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples with more than 5% of indium drops by more than 1 order of magnitude when the temperature is decreased while it remains constant for lower indium content. This drop is attributed to a freezing of photoelectron transport in p-InGaN due to electron localization in the fluctuating potential induced by the alloy disorder.

Ultrafast dynamics of hot carriers in a quasi-two-dimensional electron gas on InSe.

Two-dimensional electron gases (2DEGs) are at the base of current nanoelectronics because of their exceptional mobilities. Often the accumulation layer forms at polar interfaces with longitudinal optical (LO) modes. In most cases, the many-body screening of the quasi-2DEGs dramatically reduces the Fröhlich scattering strength.

Polarized Luminescence of Anisotropic LaPO:Eu Nanocrystal Polymorphs.

Lanthanide elements exhibit highly appealing spectroscopic properties that are extensively used for phosphor applications. Their luminescence contains precise information on the internal structure of the host materials. Especially, the polarization behavior of the transition sublevel peaks is a fingerprint of the crystal phase, symmetry, and defects.

Corrigendum: Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography.

This corrects the article DOI: 10.1038/nnano.2017.

Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography.

Rare-earth phosphors exhibit unique luminescence polarization features originating from the anisotropic symmetry of the emitter ion's chemical environment. However, to take advantage of this peculiar property, it is necessary to control and measure the ensemble orientation of the host particles with a high degree of precision. Here, we show a methodology to obtain the photoluminescence polarization of Eu-doped LaPO nanorods assembled in an electrically modulated liquid-crystalline phase.

Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop.

We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light-emitting diode under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high energy electron peaks simultaneously with an observed drop in electroluminescence efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process.

Optically anisotropic thin films by shear-oriented assembly of colloidal nanorods.

Device-scale thin films of highly oriented (in-plane) colloidal nanorods are made available by using a simple coating process involving thixotropic rod gel suspensions. Application of this process to LaPO₄ nanorods leads to films exhibiting outstanding anisotropic optical properties, such as a remarkably large birefringence (Δn = 0.13) associated with high transparency, and sharply polarized fluorescence spectra when doped with europium.