Resistivity contrast imaging in semiconductor structures using ultra-low energy scanning electron microscopy.

The damage-induced voltage alteration (DIVA) contrast mechanism in scanning electron microscope (SEM) has been studied in broad range of the primary electron beam energies, with a special emphasis on the ultra-low energy range. The SEM imaging contrast related to resistivity changes in the InAl)P irradiated with He ions of 600 keV was subjected to an analysis in a range of 10 keV down to 10 eV of primary electron energies. The problem of specimen charging in ultra-low energy range and its effect on the contrast in SEM images has been tackled for the first time.

Round Robin into Best Practices for the Determination of Indentation Size Effects.

The paper presents a statistical study of nanoindentation results obtained in seven European laboratories which have joined a round robin exercise to assess methods for the evaluation of indentation size effects. The study focuses on the characterization of ferritic/martensitic steels T91 and Eurofer97, envisaged as structural materials for nuclear fission and fusion applications, respectively. Depth-controlled single cycle measurements at various final indentation depths, force-controlled single cycle and force-controlled progressive multi-cycle measurements using Berkovich indenters at room temperature have been combined to calculate the indentation hardness and the elastic modulus as a function of depth applying the Oliver and Pharr method.

Colloidal domain lithography in multilayers with perpendicular anisotropy: an experimental study and micromagnetic simulations.

Currently, much attention is being paid to patterned multilayer systems in which there exists a perpendicular magnetic anisotropy, because of their potential applications in spintronics devices and in a new generation of magnetic storage media. To further improve their performance, different patterning techniques can be used, which render them suitable also for other applications. Here we show that He(+) 10 keV and Ar(+) 100 keV ion bombardment of (Ni(80)Fe(20)-2 nm/Au-2 nm/Co-0.