Charge transport in many systems is influenced more by local features than by a single resistance measure, making understanding local electronic potential crucial for device analysis.
A new low-energy electron microscopy (LEEM) potentiometry method has been developed that is fast, non-invasive, and allows for easy zooming and a large field of view.
This method utilizes a mirror mode transition sensitive to local electrostatic surface potentials, enabling broader application across materials, and has been successfully demonstrated on Si(111) surfaces and metal-semiconductor junctions.
Charge transport in systems often depends on local features rather than a single global resistance value, highlighting the need for techniques that map local electronic potentials.
A new potentiometry method using low-energy electron microscopy (LEEM) has been developed, which is fast, has a large field of view, and is non-invasive, but is limited by the availability of characteristic reflectivity features in some materials.
The paper introduces an alternative low-energy electron potentiometry (LEEP) method based on a universal mirror mode transition, which is effective for a wider range of materials, and demonstrates its application in analyzing electrostatic surface potential variations and the Schottky effect in metal-semiconductor junctions.
The electronic band structure of materials determines their properties by defining the allowed energy states for electrons.
Measuring occupied bands is easy, but characterizing unoccupied bands (those above the Fermi level) has been challenging until now.
The authors present a new technique using low-energy electron microscopy that can directly measure these unoccupied bands in graphene layers with high spatial resolution and potential application to various nanomaterials.
We present a study of the thickness dependence of magnetism and electrical conductivity in ultrathin La0.67Sr0.33MnO3 films grown on SrTiO3 (110) substrates.