Publications by JP Harbison | LitMetric

Publications by authors named "JP Harbison"

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Slow relaxation of excited states in strain-induced quantum dots.

TH Gfroerer MD Sturge K Kash JA Yater AS Plaut JP Harbison

Phys Rev B Condens Matter

June 1996

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Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/AlxGa1-xAs quantum wires and quantum dots.

Y Zhang MD Sturge K Kash van der Gaag BP AS Gozdz JP Harbison

Phys Rev B Condens Matter

May 1995

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Real-time observation of atomic ordering in (001) In0.53Ga0.47As epitaxial layers.

BA Philips I Kamiya K Hingerl LT Florez DE Aspnes JP Harbison

Phys Rev Lett

May 1995

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Photon-mediated sequential resonant tunneling in intense terahertz electric fields.

PS Guimarães BJ Keay JP Kaminski SJ Allen PF Hopkins JP Harbison

Phys Rev Lett

June 1993

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Fano-like resonant interference in Raman spectra of electronic and LO-vibronic excitations in periodically delta -doped GaAs.

LA Nunes L Ioriatti LT Florez JP Harbison

Phys Rev B Condens Matter

May 1993

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Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum.

I Kamiya DE Aspnes LT Florez JP Harbison

Phys Rev B Condens Matter

December 1992

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Metastable energy distribution and localization of spatially indirect excitons.

JE Golub K Kash JP Harbison LT Florez

Phys Rev B Condens Matter

April 1992

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Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition.

I Kamiya DE Aspnes H Tanaka LT Florez JP Harbison

Phys Rev Lett

February 1992

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Formation of interfaces between In and Au and GaAs(100) studied with soft-x-ray photoemission spectroscopy.

D Mao M Santos M Shayegan A Kahn Le Lay G JP Harbison

Phys Rev B Condens Matter

January 1992

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Observation of pair currents in superconductor-semiconductor contacts.

A Kastalsky AW Kleinsasser LH Greene R Bhat FP Milliken JP Harbison

Phys Rev Lett

November 1991

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Observation of quantum confinement by strain gradients.

K Kash Van der Gaag BP DD Mahoney AS Gozdz LT Florez JP Harbison

Phys Rev Lett

September 1991

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Far-infrared spectroscopy of minibands and confined donors in GaAs/AlxGa1-xAs superlattices.

M Helm FM Peeters F DeRosa E Colas JP Harbison

Phys Rev B Condens Matter

June 1991

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Long-lived spatially indirect excitons in coupled GaAs/AlxGa1-xAs quantum wells.

JE Golub K Kash JP Harbison LT Florez

Phys Rev B Condens Matter

April 1990

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Tunneling cyclotron resonance and the renormalized effective mass in semiconductor barriers.

G Brozak de Andrada e Silva EA LJ Sham F DeRosa P Miceli JP Harbison

Phys Rev Lett

January 1990

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Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAs.

DE Aspnes YC Chang AA Studna LT Florez HH Farrell JP Harbison

Phys Rev Lett

January 1990

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GaAs Clusters in the Quantum Size Regime: Growth on High Surface Area Silica by Molecular Beam Epitaxy.

C J Sandroff J P Harbison R Ramesh M J Andrejco M S Hegde

Science

July 1989

Molecular beam epitaxy has been used to grow microcrystalline clusters of gallium arsenide (GaAs) in the size range from 2.5 to 60 nanometers on high-purity, amorphous silica supports. High-resolution transmission electron microscopy reveals that clusters as small as 3.

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Quenching of the Hall effect in a one-dimensional wire.

ML Roukes A Scherer SJ Allen HG Craighead RM Ruthen JP Harbison

Phys Rev Lett

December 1987

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Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001).

DE Aspnes JP Harbison AA Studna LT Florez

Phys Rev Lett

October 1987

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Light-induced defect creation in hydrogenated amorphous silicon: A detailed examination using junction-capacitance methods.

KK Mahavadi K Zellama JD Cohen JP Harbison

Phys Rev B Condens Matter

May 1987

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Observtion of an oxygen-related mobility-gap defect in ion-implanted hydrogenated amorphous silicon films.

CE Michelson AV Gelatos JD Cohen JP Harbison

Phys Rev B Condens Matter

March 1987

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Photoluminescence in ultrathin a-Si:H layers.

BA Wilson CM Taylor JP Harbison

Phys Rev B Condens Matter

December 1986

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Layer-thickness dependence of cw photoluminescence in single a-Si:H layers.

BA Wilson CM Taylor JP Harbison

Phys Rev B Condens Matter

September 1986

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Optical studies of thermalization mechanisms in a-Si:H.

BA Wilson TP Kerwin JP Harbison

Phys Rev B Condens Matter

June 1985

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