Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure.

A simple thermal annealing at 150 °C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics.

The s-d exchange model as the underlying mechanism of magnetoresistance in ZnO doped with alkali metals.

High field magnetoresistance has been studied in epitaxial n-type ZnO:Na and ZnO:Li thin films in a temperature range between 4 K and 150 K. The resulting negative magnetoresistance can be well fitted using a semiempirical model of Khosla and Fischer based on third order contributions to the s-d exchange Hamiltonian. The parameters obtained from this model were carefully analyzed.