Infrared-spectroscopic nanoimaging with a thermal source.

Fourier-transform infrared (FTIR) spectroscopy is a widely used analytical tool for chemical identification of inorganic, organic and biomedical materials, as well as for exploring conduction phenomena. Because of the diffraction limit, however, conventional FTIR cannot be applied for nanoscale imaging. Here we demonstrate a novel FTIR system that allows for infrared-spectroscopic nanoimaging of dielectric properties (nano-FTIR).

Infrared spectroscopic near-field mapping of single nanotransistors.

We demonstrate the application of scattering-type scanning near-field optical microscopy (s-SNOM) for infrared (IR) spectroscopic material recognition in state-of-the-art semiconductor devices. In particular, we employ s-SNOM for imaging of industrial CMOS transistors with a resolution better than 20 nm, which allows for the first time IR spectroscopic recognition of amorphous SiO(2) and Si(3)N(4) components in a single transistor device. The experimentally recorded near-field spectral signature of amorphous SiO(2) shows excellent agreement with model calculations based on literature dielectric values, verifying that the characteristic near-field contrasts of SiO(2) stem from a phonon-polariton resonant near-field interaction between the probing tip and the SiO(2) nanostructures.

Terahertz near-field nanoscopy of mobile carriers in single semiconductor nanodevices.

We introduce ultraresolving terahertz (THz) near-field microscopy based on THz scattering at atomic force microscope tips. Nanoscale resolution is achieved by THz field confinement at the very tip apex to within 30 nm, which is in good agreement with full electro-dynamic calculations. Imaging semiconductor transistors, we provide first evidence of 40 nm (lambda/3000) spatial resolution at 2.