Spectral and microstructural analysis of the effect of the Gaimplantation on diamond: a CL-EELS study.

Due to its capacity to achieve nanometre-scale machining and lithography, a focused ion beam (FIB) is an extended tool for semiconductor device fabrication and development, in particular, for diamond-based devices. However, some technological steps are still not fully optimized for its use. Indeed, ion implantation seems to affect the crystalline structure and electrical properties of diamond.