Graphene growth through a recrystallization process in plasma enhanced chemical vapor deposition.

Thermal chemical vapor deposition (TCVD) is the current method of choice to fabricate high quality, large area graphene films on catalytic copper substrates. In order to obtain sufficiently high growth rates at reduced growth temperatures an efficient dissociation of the precursor molecules already in the gas phase is required. We used plasma enhanced chemical vapor deposition (PECVD) to fabricate high quality graphene films at various temperatures.