Ultrafast lasers have revolutionized material processing, opening a wealth of new applications in many areas of science. A recent technology that allows the cleaving of transparent materials via non-ablative processes is based on focusing and translating a high-intensity laser beam within a material to induce a well-defined internal stress plane. This then enables material separation without debris generation.
View Article and Find Full Text PDFWe propose the use of a prism with nonlinear optical properties to improve the prism-coupling method. The principle is based on the inscription of an adapted waveguide inside this prism by beam self-trapping to enhance the coupling efficiency and stability. The experimental demonstration is realized with a prism diced from a LiNbO3 wafer to couple light into a resonator.
View Article and Find Full Text PDFHydrogenated amorphous silicon (a:Si-H) has recently been recognized as a highly nonlinear CMOS compatible photonic platform. We experimentally demonstrate the generation of a supercontinuum (SC) spanning over 500 nm in a-Si:H photonic wire waveguide at telecommunication wavelengths using femtosecond input pulse with energy lower than 5 pJ. Numerical modeling of pulse propagation in the waveguide, based on the experimentally characterized dispersion profile, shows that the supercontinuum is the result of soliton fission and dispersive wave generation.
View Article and Find Full Text PDFWe experimentally and numerically study dispersive wave emission, soliton fission, and supercontinuum generation in a silicon wire at telecommunication wavelengths. Through dispersion engineering, we experimentally confirm a previously reported numerical study and show that the emission of resonant radiation from the solitons can lead to the generation of a supercontinuum spanning over 500 nm. An excellent agreement with numerical simulations is observed.
View Article and Find Full Text PDFWe report supercontinuum (SC) generation centered on the telecommunication C-band (1550 nm) in CMOS compatible hydrogenated amorphous silicon waveguides. A broadening of more than 550 nm is obtained in 1cm long waveguides of different widths using as pump picosecond pulses with on chip peak power as low as 4 W.
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