Co-Creation of Patient-Centered Metrics for Long-Term Well-Being Involving People with HIV and HIV Care Providers.

Achieving viral suppression alone does not fully resolve the multifaceted health challenges faced by people with HIV (PWH), such as early aging, multimorbidity, and low health-related quality of life. This co-creation pilot study to investigate patient-centered metrics for long-term well-being involved the development of a knowledge, attitudes, and practices survey through focus groups and its implementation among HIV care providers in Barcelona, Spain, in 2024. A collaborative approach of involving PWH from the community was essential in ensuring the relevance of the identified issues.

Self-Arranged Misfit Dislocation Network Formation upon Strain Release in La0.7Sr0.3MnO3/LaAlO3(100) Epitaxial Films under Compressive Strain.

Lattice-mismatched epitaxial films of La0.7Sr0.3MnO3 (LSMO) on LaAlO3 (001) substrates develop a crossed pattern of misfit dislocations above a critical thickness of 2.

Competing misfit relaxation mechanisms in epitaxial correlated oxides.

Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidence of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic, and octahedral tilting energies in La(0.7)Sr(0.

Processing and immobilization of chondroitin-4-sulphate by UV laser radiation.

Chondroitin-4-sulphate (ChS A) was immobilized by matrix assisted pulsed laser evaporation (MAPLE) with the aid of a UV KrF* excimer laser source. Distilled water was used as solvent for the preparation of the frozen composite MAPLE targets. The surface morphology, chemical structure and functional properties of laser transferred ChS A were investigated as a function of laser processing conditions.

Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates.

Laser irradiation of Ge quantum dots (QDs) grown on Si(100) substrates by solid-source molecular beam epitaxy has been performed using a Nd:YAG laser (532 nm wavelength, 5 ns pulse duration) in a vacuum. The evolution of the Ge QD morphology, strain and composition with the number of laser pulses incident on the same part of the surface, have been studied using atomic force microscopy, scanning electron microscopy and Raman spectroscopy. The observed changes in the topographical and structural properties of the QDs are discussed in terms of Ge-Si diffusion processes.