Publications by authors named "J Rene Suckert"

Article Synopsis
  • Silicon has traditionally been used in a cubic diamond lattice structure, making it an indirect-bandgap semiconductor that struggles with efficient light emission.
  • Recent experiments have successfully demonstrated effective light emission from hexagonal germanium (Ge) and silicon-germanium (SiGe) alloys, achieving a radiative recombination lifetime of less than a nanosecond.
  • The ability to tune the emission wavelength of hexagonal SiGe alloys while maintaining a direct bandgap suggests great potential for integrating electronic and optoelectronic functions in advanced devices.
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Relaxation effects are of primary importance in the description of magnetic excitations, leading to a myriad of methods addressing the phenomenological damping parameters. In this work, we consider several well-established forms of calculating the intrinsic Gilbert damping within a unified theoretical framework, mapping out their connections and the approximations required to derive each formula. This scheme enables a direct comparison of the different methods on the same footing and a consistent evaluation of their range of validity.

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