Controllable synthesis and morphology-dependent light emission efficiency of ZnGeO nanophosphors.

ZnGeO is considered a very promising alternative to current luminescent semiconductors. Previous results suggest that its emitted wavelength may depend on different variables, such as particle size and morphology, among others. In this work, we have prepared pure and highly homogeneous ZnGeO nanorods under hydrothermal synthesis conditions with a willemite-like structure.

Characterization of Tunneled Wide Band Gap Mixed Conductors: The NaO-GaO-TiO System.

This article focuses on the NaO-GaO-TiO system, which is barely explored in the study of transparent conductive oxides (TCOs). NaGaTiO (n = 5, 6, and 7 and x ≈ 0.7-0.

Temperature-Dependent and Time-Resolved Luminescence Characterization of γ-GaO Nanoparticles.

The temperature-dependent luminescence properties of γ-GaO nanoparticles prepared by a precipitation method are investigated under steady-state and pulsed-light excitation. The main photoluminescence (PL) emission at room temperature consists of a single blue band centered around 2.76 eV, which hardly undergoes a blueshift of 0.

In Situ Local Oxidation of SnO Induced by Laser Irradiation: A Stability Study.

In this work, semiconductor tin oxide (II) (SnO) nanoparticles and plates were synthesized at room conditions via a hydrolysis procedure. X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed the high crystallinity of the as-synthesized romarchite SnO nanoparticles with dimensions ranging from 5 to 16 nm. The stability of the initial SnO and the controlled oxidation to SnO was studied based on either thermal treatments or controlled laser irradiation using a UV and a red laser in a confocal microscope.

Towards Control of the Size, Composition and Surface Area of NiO Nanostructures by Sn Doping.

Achieving nanostructures with high surface area is one of the most challenging tasks as this metric usually plays a key role in technological applications, such as energy storage, gas sensing or photocatalysis, fields in which NiO is gaining increasing attention recently. Furthermore, the advent of modern NiO-based devices can take advantage of a deeper knowledge of the doping process in NiO, and the fabrication of p-n heterojunctions. By controlling experimental conditions such as dopant concentration, reaction time, temperature or pH, NiO morphology and doping mechanisms can be modulated.