Publications by authors named "J Polaczynski"
Article Synopsis
- - We developed pentagonal PbSnTe nanowires (NWs) with a specific orientation using advanced growth methods and explored their structural stability across various phases through computational models.
- - Our findings showcase that the combination of ionic and covalent bonding leads to the preferential formation of these pentagonal structures in tellurides compared to selenides, along with unique electronic properties.
- - The innovative design of these NWs features a metallic core that connects different electronic bands, differing between various boundaries, potentially paving the way for novel applications in higher-order topology and fractional charge phenomena.
Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths.
Nanotechnology
September 2018
In this paper, we study intersubband characteristics of GaN/AlN and GaN/AlGaN heterostructures in GaN nanowires structurally designed to absorb in the mid-infrared wavelength region. Increasing the GaN well width from 1.5 to 5.
View Article and Find Full Text PDFNanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination.
View Article and Find Full Text PDFIn this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the doping density and well/nanodisk size.
View Article and Find Full Text PDFArticle Synopsis
- The study focuses on GaN single-nanowire ultraviolet photodetectors that incorporate a GaN/AlN superlattice, designed to optimize carrier collection.
- Under positive bias, the photodetectors enhance collection from the superlattice, while negative bias improves collection from the GaN base, demonstrated through electron beam-induced current measurements.
- The enhanced response in the UV A/B spectral ranges is supported by photocurrent data, electron microscopy images, and simulations of strain and band structures.