The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface.

In hexagonal materials, (a+c) dislocations are typically observed to dissociate into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconductor layers by the process of plastic relaxation. As there is an increasing interest in obtaining relaxed InGaN buffer layers for the deposition of high In content structures, the study of the dissociation mechanism of misfit (a+c) dislocations laying at the InGaN/GaN interface is then crucial for understanding their nucleation and glide mechanisms.

Influence of Ion Nitriding on Microstructure and Properties of Haynes 282 Nickel Superalloy Specimens Produced Using DMLS Technique.

The paper investigates the influence of the ion-nitriding process on the microstructure, corrosion resistance, and tensile strength at elevated temperatures of Haynes 282 nickel superalloy specimens produced by the Direct Metal Laser Sintering (DMLS) technique. The study was performed for two conditions, i.e.

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs.

The aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice.

The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers.

III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects of their performance. The physical mechanisms leading to TD nucleation in these materials are still not fully elucidated.

Stack of two III-nitride laser diodes interconnected by a tunnel junction.

We demonstrate a stack of two III-nitride laser diodes (LDs) interconnected by a tunnel junction grown by plasma-assisted molecular beam epitaxy. Hydrogen-free growth is used to obtain as-grown p-type conductivity essential for buried tunnel junctions (TJ). We show the impact of the design of tunnel junction.