H(2)GaN(3) and Derivatives: A Facile Method to Gallium Nitride.

We describe the formation and properties of H(2)GaN(3) (1), which is a very simple and stable molecular source for chemical vapor deposition (CVD) of GaN heterostructures. Compound 1 and the perdeuterated analogue D(2)GaN(3) (2) are prepared by the LiGaH(4) and LiGaD(4) reduction of Br(2)GaN(3) (3), respectively. Compound 3 is obtained from the thermal decomposition of the crystalline adduct SiMe(3)N(3).

Synthesis and structures of heterocyclic azidogallanes [(CH3)ClGaN3]4 and [(CH3)BrGaN3]3 en route to [(CH3)HGaN3]x: an inorganic precursor to GaN.

The synthesis of [(CH3)ClGaN3]4 (1) with a heterocyclic cyclooctane-like structure and [(CH3)BrGaN3]3 (2) with a trimeric structure has been demonstrated. X-ray structural determinations reveal that 1 and 2 consist of Ga4N4 eight-membered rings and Ga3N3 six-membered rings, respectively, in which the Ga atoms are bridged by the alpha nitrogens of the azide groups. [(CH3)ClGaN3]4 crystallizes in the tetragonal space group P42(1)c with a = 11.

Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H(3)C)(3)SiN(3).GaCl(3), en Route to Cl(2)GaN(3) and Its Derivatives: Inorganic Precursors to Heteroepitaxial GaN.

The formation of a novel Lewis acid-base complex between the silyl azide Si(CH(3))(3)N(3) and GaCl(3) having the formula (H(3)C)(3)SiN(3).GaCl(3)()()(1) is demonstrated. The X-ray crystal structure of 1 shows that the electron-donating site is the nitrogen atom directly bonded to the organometallic group.