This prospective and performance summary provides a view on the state of the art of emerging non-volatile memory (eNVM) in the semiconductor industry. The overarching aim is to inform academic researchers of the status of these technologies in industry, so as to help direct the right academic research questions for future materials and device development. eNVM already have a strong foothold in the semiconductor industry with the main target of replacing embedded flash memory, and soon possibly DRAM and SRAM, i.
View Article and Find Full Text PDFThe discovery of ferroelectricity in nanoscale hafnia-based oxide films has spurred interest in understanding their emergent properties. Investigation focuses on the size-dependent polarization behavior, which is sensitive to content and movement of oxygen vacancies. Though polarization switching and electrochemical reactions is shown to co-occur, their relationship remains unclear.
View Article and Find Full Text PDFA double layer 2-terminal device is employed to show Na-controlled interfacial resistive switching and neuromorphic behavior. The bilayer is based on interfacing biocompatible NaNbO and NbO, which allows the reversible uptake of Na in the NbO layer. We demonstrate voltage-controlled interfacial barrier tuning via Na transfer, enabling conductivity modulation and spike-amplitude- and spike-timing-dependent plasticity.
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