Gallium arsenide optical phased array photonic integrated circuit.

A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92° beamwidth, 15.

Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers.

Compared to quantum well (QW) lasers, lower dimensional quantum dot (QD) or quantum dash (QDash) devices demonstrate superior performances, owing to their quantized energy levels and increased carrier confinement. Here, we report the systematic comparison of static and dynamic properties of long wavelength (1550 nm) QDash and QW lasers. For the QDash lasers, a higher maximum operating temperature and lower temperature dependence was achieved for long cavities, although the threshold current densities were larger than the QW reference devices.

Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate.

We demonstrate a simple method to fabricate efficient, electrically driven, polarized, and phosphor-free white semipolar (20-21) InGaN light-emitting diodes (LEDs) by adopting a top blue quantum well (QW) and a bottom yellow QW directly grown on (20-21) semipolar bulk GaN substrate. At an injection current of 20 mA, the fabricated 0.1 mm size regular LEDs show an output power of 0.

Indium Phosphide Photonic Integrated Circuits for Free Space Optical Links.

An indium phosphide (InP)-based photonic integrated circuit (PIC) transmitter for free space optical communications was demonstrated. The transmitter consists of a sampled grating distributed Bragg reflector (SGDBR) laser, a high-speed semiconductor optical amplifier (SOA), a Mach-Zehnder modulator, and a high-power output booster SOA. The SGDBR laser tunes from 1521 nm to 1565 nm with >45 dB side mode suppression ratio.

Low dark current III-V on silicon photodiodes by heteroepitaxy.

Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-μm diameter have dark currents as low as 10 nA at 3 V corresponding to a dark current density of only 0.8 mA/cm.