Fast photodischarge of selenium electrophotographic layers.

Fast photodischarge (10(-3)-10(-7) sec) of electrophotographic selenium layers due to strongly absorbed light pulses (10(-7) sec) has been investigated by means of differential and integral methods. The results provide valuable information on the conditions of carrier drift and trapping during discharge. Se layers are found to possess high density of hole and shallow electron traps concentrated predominately at the surface of a layer.

Recombination in selenium electrophotographic layers.

Single and double photoinjections prove to be a useful tool for investigations of recombination mechanisms. The photodischarge of selenium electrophotographic layers due to double and single photo-injections has been investigated. Experimental results show that every photoproduced pair of free carriers either recombines independently of the other free carriers or takes part in the photodischarge without subsequent recombination.