Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array.

In this work, AlInN/GaN/AlGaN/GaN epitaxial layers used for the fabrication of double-channel metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 10 cm and an electron mobility of 1770 cm/V-s were obtained.

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array.

Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (GaO) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel AlInN/GaN/AlGaN/GaN heterostructured-metal-oxide-semiconductors (MOSHEMTs). The double-channel was constructed by the polarized AlGaN/GaN channel 1 and band discontinued lattice-matched AlInN/GaN channel 2. Because of the superior gate control capability, the generally induced double-hump transconductance characteristics of double-channel MOSHEMTs were not obtained in the devices.

Microplastic emissions from household washing machines: preliminary findings from Greater Kuala Lumpur (Malaysia).

Microplastics have been recognized as emerging pollutants with potential ecotoxicological impact. The contribution of washing machine use to microplastics emission at the household level is still not completely understood. This study aims to characterize microplastic emissions in laundry water from household washing machines from Greater Kuala Lumpur (Malaysia).

Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum.

We have developed a swift and simplistic protein immunoassay using aptamer functionalized AlGaN/GaN high electron mobility transistors (HEMTs). The unique design of the sensor facilitates protein detection in a physiological salt environment overcoming charge screening effects, without requiring sample preprocessing. This study reports a tunable and amplified sensitivity of solution-gated electric double layer (EDL) HEMT-based biosensors, which demonstrates significantly enhanced sensitivity by designing a smaller gap between the gate electrode and the detection, and by operating at higher gate voltage.

High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity.

Lead ion selective membrane (Pb-ISM) coated AlGaN/GaN high electron mobility transistors (HEMT) was used to demonstrate a whole new methodology for ion-selective FET sensors, which can create ultra-high sensitivity (-36 mV/log [Pb]) surpassing the limit of ideal sensitivity (-29.58 mV/log [Pb]) in a typical Nernst equation for lead ion. The largely improved sensitivity has tremendously reduced the detection limit (10 M) for several orders of magnitude of lead ion concentration compared to typical ion-selective electrode (ISE) (10 M).