Pseudotunnel Magnetoresistance in Twisted van der Waals FeGeTe Homojunctions.

Twistronics, a novel engineering approach involving the alignment of van der Waals (vdW) integrated two-dimensional materials at specific angles, has recently attracted significant attention. Novel nontrivial phenomena have been demonstrated in twisted vdW junctions (the so-called magic angle), such as unconventional superconductivity, topological phases, and magnetism. However, there have been only few reports on integrated vdW layers with large twist angles θ, such as twisted interfacial Josephson junctions using high-temperature superconductors.

Atom-Vacancy-Defect-Derived Electric Hysteresis Loops and Stochastic Low-Frequency Noises in Few-Atom Layer MoS.

Atom-vacancy-defects present in various materials yield numerous interesting physical phenomena, even obstructing high performance in some cases. On the other hand, their valuable applications to novel devices, such as nitrogen vacancy centers in diamond for quantum bits, have gathered significant attention. In particular, these tendencies become more substantial in two-dimensional (2D) (atomically) thin van der Waals layers.

Effects of chain-chain interaction on the configuration of short-chain alkanethiol self-assembled monolayers on a metal surface.

Surface-specific sum frequency generation vibrational spectroscopy is applied to study the molecular configuration of short-chain n-alkanethiol self-assembled monolayers (SAMs with n = 2-6) on the Au surface. For monolayers with n≥ 3, the alkanethiols are upright-oriented, with the CH3 tilt angle varying between ∼33° and ∼46° in clear even-odd dependency. The ethanethiol monolayer (n = 2) is, however, found to exhibit a distinct lying-down configuration with a larger methyl tilt angle (67°-79°) and a smaller CH2 tilt angle (56°-68°).

Coexistence of Quantum-Spin-Hall and Quantum-Hall-Topological-Insulating States in Graphene/hBN on SrTiO Substrate.

SrTiO (STO) substrate, a perovskite oxide material known for its high dielectric constant (ɛ), facilitates the observation of various (high-temperature) quantum phenomena. A quantum Hall topological insulating (QHTI) state, comprising two copies of QH states with antiparallel two ferromagnetic edge-spin overlap protected by the U(1) axial rotation symmetry of spin polarization, has recently been achieved in low magnetic field (B) even as high as ≈100 K in a monolayer graphene/thin hexagonal boron nitride (hBN) spacer placed on an STO substrate, thanks to the high ɛ of STO. Despite the use of the heavy STO substrate, however, proximity-induced quantum spin Hall (QSH) states in 2D TI phases, featuring a topologically protected helical edge spin phase within time-reversal-symmetry, is not confirmed.