Publications by authors named "J Harmand"

This study critically analyses filtration process modeling in membrane bioreactor (MBR) technology. More specifically, the variety of approaches and assumptions considered within a curated selection of resistance-in-series (RIS) filtration models found in the literature is critically assessed. Aimed to move towards good filtration process modeling practices, the basis for establishing a unified framework rooted in the fundamentals of membrane fouling is defined in this work, considering fouling classifications, process dynamics, and underlying processes used by different authors for elucidating membrane fouling phenomena.

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The optimization of integrated membrane bioreactors (MBRs) models is of paramount importance in view of reducing the costs, greenhouse gas emissions or enhancing the water quality. On this behalf, this paper, produced by the International Water Association (IWA) Task Group on Membrane modelling and control, reviews the current state-of-the-art regarding the control and optimization of integrated MBR models. Whether aerobic or anaerobic, such modelling allows the consideration of specific functioning conditions and optimization problems together with the estimation and monitoring of Performance Index (PIs).

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A gallium interstitial defect is thought to be responsible for the spectacular spin-dependent recombination in GaAs_{1-x}N_{x} dilute nitrides. Current understanding associates this defect with at least two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photoinduced current transient spectroscopy, the in-gap electronic structure of a x=0.

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A simple model is developed for membrane fouling, taking into account two main fouling phenomena: cake formation, due to attached solids on the membrane surface, and pore clogging, due to retained compounds inside the pores. The model is coupled with a simple anaerobic digestion model for describing the dynamics of an anaerobic membrane bioreactor (AnMBR). In simulations, we investigate its qualitative behavior: it is shown that the model exhibits satisfying properties in terms of a flux decrease due to membrane fouling.

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Article Synopsis
  • Selective area growth of GaN nanostructures was studied, focusing on the effects of temperature and ammonia flux during hydride vapor phase epitaxy.
  • The research highlighted two growth behaviors in GaN nanowires, including a growth suppression issue that was resolved using a cyclic growth method.
  • A theoretical model was created to explain this growth suppression and various GaN nanocrystal shapes were produced by balancing growth and blocking mechanisms based on temperature and vapor composition, leading to optimal conditions for 5 μm long nanowires.
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